Wafer-Scale MBE of Two-Dimensional GaSe Semiconductors with <em>in-situ</em> Characterisation of Their Surface and Optical Properties

Sergei Novikov

4:00 PM - 4:15 PM

[TU-B2-03] Wafer-Scale MBE of Two-Dimensional GaSe Semiconductors with in-situ Characterisation of Their Surface and Optical Properties

〇Sergei Novikov¹, T. S. Cheng¹, M. Shiffa¹, B. T. Dewes¹, J. Bradford¹, N. D. Cottam¹, C. J. Mellor¹, O. Makarovskiy¹, K. Rahman¹, J. N. O’Shea¹, P. H. Beton¹, T. Ben², D. Gonzalez², A. Patanè¹ (1. Univ. of Nottingham (UK), 2. Univ. de Cadiz (Spain))

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Presentation information

MBE Fundamentals, Innovations, and Production 1

[TU-B2-03] Wafer-Scale MBE of Two-Dimensional GaSe Semiconductors with in-situ Characterisation of Their Surface and Optical Properties

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