Nitrides

[TU-PS-33] AlGaN/AlGaN High Electron Mobility Transistor Heterostructures grown on 200 mm silicon substrates: Challenges and benefits of MBE

〇Antoine BARBIER-CUEIL¹, Stephanie RENNESSON², Jash MEHTA³, Farid MEDJDOUB⁴, Frédéric MARTINEZ⁵, Fabrice SEMOND⁶ (1. CNRS-CRHEA (France), 2. EasyGaN SAS (France), 3. CNRS-IEMN (France), 4. CNRS-IEMN (France), 5. Azelis SAS (France), 6. CNRS-CRHEA (France))