Quasi-Van der Waals Epitaxy of AlAs on GaAs (100) Using Graphene as 2D Interlayer as Precursor for Al<sub>2</sub>O<sub>3</sub>.

Angel Leonardo Martinez Lopez

1:00 PM - 2:30 PM

[TU-PS-37] Quasi-Van der Waals Epitaxy of AlAs on GaAs (100) Using Graphene as 2D Interlayer as Precursor for Al₂O₃.

〇Angel Leonardo Martinez Lopez¹, Maximo Lopez Lopez², Julio Gregorio Mendoza Alvarez², Yenny Lucero Casallas Moreno³ (1. Ph.D. Prog. in nanosci. and nanotech., CINVESTAV-IPN (Mexico), 2. Phys. Dept., CINVESTAV-IPN (Mexico), 3. CONACYT-UPIITA-IPN (Mexico))

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Presentation information

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[TU-PS-37] Quasi-Van der Waals Epitaxy of AlAs on GaAs (100) Using Graphene as 2D Interlayer as Precursor for Al₂O₃.

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Presentation information

Oxides

[TU-PS-37] Quasi-Van der Waals Epitaxy of AlAs on GaAs (100) Using Graphene as 2D Interlayer as Precursor for Al2O3.

Password

[TU-PS-37] Quasi-Van der Waals Epitaxy of AlAs on GaAs (100) Using Graphene as 2D Interlayer as Precursor for Al₂O₃.