B. Mayer ¹, T. Stettner ¹, J. Bissinger ¹, D. Ruhstorfer ¹, M. Kaniber ¹, G. Koblmuller ¹, ^○J.J. Finley ¹ (1.Technical Univ. of Munich (Germany))

^○K. Kawaguchi ^1,2, H. Sudo ¹, M. Matsuda ¹, K. Takemoto ¹, T. Yamamoto ¹, Y. Arakawa ² (1.Fujitsu Labs. Ltd. (Japan), 2.Univ. of Tokyo (Japan))

^○M. Takiguchi ^1,2, A. Yokoo ^1,2, K. Nozak ^1,2, M.D. Birowosuto ^1,2, K. Tateno ^1,2, G. Zhang ^1,2, E. Kuramochi ^1,2, A. Shinya ^1,2, M. Notomi ^1,2 (1.NTT NPC (Japan), 2.NTT BRL (Japan))

^○F. Maehara ¹, J. Tatebayashi ¹, S. Ishida ¹, M. Nishioka ¹, Y. Ota ¹, S. Iwamoto ¹, Y. Arakawa ¹ (1.Univ. of Tokyo (Japan))

^○X. Yang ^1,2, W. Du ^1,2, X. Ji ^1,2, T. Yang ^1,2 (1.Inst. of Semiconductors, Chinese Academy of Sciences (China), 2.College of Materials Science and Opto-electronic Technology, Univ. of Chinese Academy of Sciences (China))

^○C.F. Fong ^1,2, Y. Ota ^1,3, S. Iwamoto ^1,2,3, Y. Arakawa ^1,2,3 (1.Univ. of Tokyo (Japan), 2.Inst. of Industrial Science (Japan), 3.Inst. for Nano Quantum Information Electronics (Japan))

^○K. Kuruma ¹, Y. Ota ¹, M. Kakuda ¹, S. Iwamoto ¹, Y. Arakawa ¹ (1.Univ. of Tokyo (Japan))