^○J. Zhang ¹, Y. Kosugi ¹, Y. Nakano ¹, T. Tanemura ^1,2 (1.Univ. of Tokyo (Japan), 2.JST PRESTO (Japan))

D. Okitsu ¹, Y. Yamano ¹, J.-H. Noh ^1,2, ^○T. Arakawa ¹ (1.Yokohama Nat'l Univ. (Japan), 2.Kanto Gakuin Univ. (Japan))

^○N. Sekine ¹, J.-H. Han ¹, S. Takagi ¹, M. Takenaka ¹ (1.Univ.of Tokyo (Japan))

^○S. Matsuo ^1,2, K. Takeda ^1,2, T. Hiraki ^1,2, E. Kanno ², T. Fujii ^1,2, T. Kakitsuka ^1,2 (1.NTT Nanophotonics Center (Japan), 2.NTT Device Technology Labs. (Japan))

^○W. Ma ¹ (1.Institute of Semiconductors, Chinese Academy of Sciences (China))

^○S. Yoshitomi ¹, S. Tadano ¹, K. Yamanaka ¹, N. Nishiyama ¹, S. Arai ¹ (1.Tokyo Tech (Japan))

^○M. Mimura ¹, T. Miyamoto ¹ (1.Tokyo Tech (Japan))

^○K. Nagasaka ¹, J. Suzuki ¹, Y. Hayashi ¹, N. Nishiyama ¹, S. Arai ¹ (1.Tokyo Tech (Japan))

^○Haiping He ¹, Jing Li ¹, Hongwen Huang ², Jie Zeng ², Zhizhen Ye ¹ (1.Zhejiang Univ. (China), 2.Univ. of Sci. Tech. of China (China))