Avalanche Gain in Membrane p-i-n Photodiodes on Si Substrate

S. Matsuo

講演情報

Oral Presentation

14: Optoelectronics and Photonic Devices

[Th1J] Optoelectronic Devices and Materials

2017年8月24日(木) 09:10 〜 11:40 Room J (COMET) (43F)

Session Chair:J.P. Reithmaier(Univ. of Kassel), K. Takeda(NTT Device Technology Lab.)

10:10 〜 10:25

[Th1J-05] Avalanche Gain in Membrane p-i-n Photodiodes on Si Substrate

^○S. Matsuo ^1,2, K. Takeda ^1,2, T. Hiraki ^1,2, E. Kanno ², T. Fujii ^1,2, T. Kakitsuka ^1,2 (1.NTT Nanophotonics Center (Japan), 2.NTT Device Technology Labs. (Japan))

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講演情報

[Th1J] Optoelectronic Devices and Materials

[Th1J-05] Avalanche Gain in Membrane p-i-n Photodiodes on Si Substrate

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