[B-4-5] Obtaining of atomically smooth 4H-SiC (0001) surface by optimizing anodic oxidation parameters in slurryless electrochemical mechanical polishing 〇Xu Yang1、Xiaozhe Yang1、Kentaro Kawai1、Kenta Arima1、Kazuya Yamamura1 (1.Osaka University) キーワード:Polishing、slurryless、electrochemical mechanical polishing