Characterization of silicon oxide thin films deposited at low temperatures using an atmospheric-pressure plasma-enhanced chemical vapor deposition technology

[F-1-6] Characterization of silicon oxide thin films deposited at low temperatures using an atmospheric-pressure plasma-enhanced chemical vapor deposition technology

〇Masaya Maegawa¹、Sigeto Nawata¹、Hiromasa Ohmi¹、Hiroaki Kakiuchi¹、Kiyoshi Yasutake¹ (1.Osaka university)

キーワード：Others、low-temperature deposition、atmospheric-pressure plasma、hydrophobic property、