Characterization of silicon oxide thin films deposited at low temperatures using an atmospheric-pressure plasma-enhanced chemical vapor deposition technology

[F-1-6] Characterization of silicon oxide thin films deposited at low temperatures using an atmospheric-pressure plasma-enhanced chemical vapor deposition technology

〇Masaya Maegawa¹, Sigeto Nawata¹, Hiromasa Ohmi¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹ (1.Osaka university)

Keywords:Others、low-temperature deposition、atmospheric-pressure plasma、hydrophobic property、