B-4 Nano-scale surface finishings

[P-12] Relationship between removal rate and slurry content of polishing pad in high downward pressure CMP

〇Ryotaro Higashi¹, Hidetoshi Takeda¹, Hideo Aida¹ (1.Nagaoka University of Technology)

Keywords:Polishing、silicon carbide (SiC)、gallium nitride (GaN)、chemical mechanical polishing (CMP)、removal rate