[P-12] Relationship between removal rate and slurry content of polishing pad in high downward pressure CMP 〇Ryotaro Higashi1、Hidetoshi Takeda1、Hideo Aida1 (1.Nagaoka University of Technology) キーワード：Polishing、silicon carbide (SiC)、gallium nitride (GaN)、chemical mechanical polishing (CMP)、removal rate
