[Mo-1A] MOSFETs I

2019年9月30日(月) 11:30 〜 12:45 Room A (Kyoto International Conference Center)

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11:30 〜 12:00

[Mo-1A-01(Invited)] Design and Performance of SiC Trench MOSFETs

*Dethard Peters¹ (1. Infineon Technologies AG(Germany))

12:00 〜 12:15

[Mo-1A-02] Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation

*Yutaka Fukui¹, Katsutoshi Sugawara¹, Rina Tanaka¹, Hidenori Koketsu¹, Hideyuki Hatta¹, Yusuke Miyata¹, Hiroyoshi Suzuki¹, Kensuke Taguchi¹, Yasuhiro Kagawa¹, Shingo Tomohisa¹, Naruhisa Miura¹ (1. Mitsubishi Electric Corp.(Japan))

12:15 〜 12:30

[Mo-1A-03] Performace Improvement of Trench Gate SiC MOSFET by Localized High-Concentration N-Type Ion Implantation

*Rina Tanaka¹, Katsutoshi Sugawara², Yutaka Fukui¹, Hideyuki Hatta¹, Hidenori Koketsu¹, Hiroyoshi Suzuki², Yusuke Miyata¹, Kensuke Taguchi², Yasuhiro Kagawa², Shingo Tomohisa¹, Naruhisa Miura¹ (1. Advanced Technology R&D Center, Mitsubishi Electric Corp.(Japan), 2. Power Device Works, Mitsubishi Electric Corp.(Japan))

12:30 〜 12:45

[Mo-1A-04] 1200 V / 200 A V-groove Trench MOSFET Optimized for Low Power Loss and High Reliability

*Kosuke Uchida¹, Toru Hiyoshi¹, Yu Saitoh¹, Hiroshi Egusa¹, Tatsushi Kaneda¹, Hirotaka Oomori¹, Takashi Tsuno¹ (1. Sumitomo Electric Industries, Ltd.(Japan))

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