[Mo-2B] 3C-hetero-epitaxy

2019年9月30日(月) 14:15 〜 15:30 Annex Hall 2 (Kyoto International Conference Center)

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14:15 〜 14:30

[Mo-2B-01] High-quality C-face 3C-SiC(111) Grown on off-axis C-face 4H-SiC Substrates

Yuchen Shi¹, Valdas Jokubavicius¹, Ivan G. Ivanov¹, Rositsa Yakimova¹, Mikael Syväjärvi¹, *Jianwu Sun¹ (1. Linkoping University, Sweden(Sweden))

14:30 〜 14:45

[Mo-2B-02] 3C-SiC growth on ISP substrates: effects of substrate geometry on void formation and growth rate

*M. Zimbone¹, C. Calabretta¹, M. Zielinski², F. Mancarella¹, Francesco La Via¹ (1. CNR-IMM(Italy), 2. NOVASiC(France))

14:45 〜 15:00

[Mo-2B-03] Analysis of Defect-Free Hot Filament CVD-grown 3C-SiC

*Bart Van Zeghbroeck¹, Ryan R Brow², Tomoko Borsa¹, David Bobela³ (1. Univ. of Colorado(United States of America), 2. NREL(United States of America), 3. TrueNano Inc(United States of America))

15:00 〜 15:15

[Mo-2B-04] Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon

*Marcin Zielinski¹, Sylvain Monnoye¹, Hugues Mank¹, Frank Torregrosa², Gregory Grosset², Yohann Spiegel², Marc Portail³, Adrien Michon³ (1. NOVASiC(France), 2. IBS(France), 3. CNRS-CRHEA, UCA Univ.(France))

15:15 〜 15:30

[Mo-2B-05] Microscopic Identification of Surface Steps of SiC by the Density-Functional Calculations

*Kaori Seino¹, Atsushi Oshiyama¹ (1. Nagoya Univ.(Japan))

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