10:45 〜 11:15
*Takeyoshi Masuda1, Y. Saito1,2, T. Hatayama1, H. Michikoshi1, Y. Mikamura2, S. Harada1 (1. National Institute of Advanced Industrial Science and Technology(Japan), 2. Sumitomo Electric Industries, Ltd(Japan))
Oral Presentation
Power and High-Frequency Devices
2019年10月1日(火) 10:45 〜 12:15 Room A (Kyoto International Conference Center)
10:45 〜 11:15
*Takeyoshi Masuda1, Y. Saito1,2, T. Hatayama1, H. Michikoshi1, Y. Mikamura2, S. Harada1 (1. National Institute of Advanced Industrial Science and Technology(Japan), 2. Sumitomo Electric Industries, Ltd(Japan))
11:15 〜 11:30
*Kijeong Han1, Ajit Kanale1, B. Jayant Baliga1, Subhashish Bhattacharya1 (1. North Carolina State Univ.(United States of America))
11:30 〜 11:45
*Takeru Suto1, Naoki Watanabe1, Yuan Bu1, Hiroshi Miki1, Naoki Tega1, Yuki Mori1, Digh Hisamoto1, Akio Shima1 (1. Hitachi, Ltd.(Japan))
11:45 〜 12:00
*Aditi Agarwal1, Ajit Kanale1, Kijeong Han1, B. Jayant Baliga1, Subhashish Bhattacharya1 (1. NC State University(United States of America))
12:00 〜 12:15
*Taiga Kanamori1, Ruito Aiba1, Masataka Okawa1, Shinsuke Harada2, Hiroshi Yano1, Noriyuki Iwamuro1 (1. Univ. of Tsukuba(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))
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