Session information

Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

Tue. Oct 1, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

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1:45 PM - 2:15 PM

[Tu-3A-01(Invited)] Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO₂/SiC Systems

*Koji Ito¹, Takuma Kobayashi¹, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan))

2:15 PM - 2:30 PM

[Tu-3A-02] Calculation of mobility and localized-state density at SiO₂/SiC interface with random fluctuation

*Hironori Yoshioka¹ (1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan))

2:30 PM - 2:45 PM

[Tu-3A-03] Depth-Resolved Analysis of the SiO₂/4H-SiC Interface using Low-Energy Muons

*Judith Woerle^1,2, Thomas Prokscha², Ulrike Grossner¹ (1. ETH Zurich(Switzerland), 2. Paul Scherrer Institute(Switzerland))

2:45 PM - 3:00 PM

[Tu-3A-04] Evidence of a Transition Layer at the SiO₂ / 4H-SiC MOS Interface from AC Conductance Data

*James A Cooper¹ (1. Sonrisa Research, Inc. and Purdue University(United States of America))

3:00 PM - 3:15 PM

[Tu-3A-05] Influence of non-uniform interface defect distribution on channel mobility in SiC MOSFETs investigated by local deep level transient spectroscopy and device simulation

*Kohei Yamasue¹, Yuji Yamagishi¹, Yasuo Cho¹ (1. Tohoku Univ.(Japan))

3:15 PM - 3:30 PM

[Tu-3A-06] Profiling with Depth Resolution of Sub-nm for SiO₂/SiC Interface by Dual-beam TOF-SIMS Combined with Simulation

*Junichiro Sameshima¹, Aya Takenaka¹, Yuichi Muraji¹, Yoshihiko Nakata¹, Masanobu Yoshikawa¹, Katsumasa Suganuma² (1. Toray Research Center, Inc.(Japan), 2. Osaka Univ.(Japan))

3:30 PM - 3:45 PM

[Tu-3A-07LN] Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides

*Xufang Zhang¹, Dai Okamoto¹, Mitsuru Sometani², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Tsukuba Univ.(Japan), 2. AIST(Japan))

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