[Tu-1B] Extended Defects I

Tue. Oct 1, 2019 8:45 AM - 10:15 AM Annex Hall 2 (Kyoto International Conference Center)

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8:45 AM - 9:15 AM

[Tu-1B-01(Invited)] Operando X-ray topography analysis of 4H-SiC MOSFETs for investigating stacking fault expansion

K. Konishi¹, R. Fujita¹, K. Kobayashi¹, A. Yoneyama¹, Y. Mori¹, *AKIO SHIMA¹ (1. Research & Development Group, Hitachi, Ltd.(Japan))

9:15 AM - 9:30 AM

[Tu-1B-02] Nitrogen Concentration Dependence of Expansion Behavior of Double Shockley Stacking Faults in 4H-SiC Studied by In-situ Synchrotron X-ray Topography

*Fumihiro Fujie¹, Shunta Harada^1,2, Hiromasa Suo^3,4, Tomohisa Kato⁴, Toru Ujihara^1,2,5 (1. Department of Materials Process and Eng., Nagoya Univ.(Japan), 2. Center for Integrated Res. of Future Electronics (CIRFE), Inst. of Materials and Systems for Sustainability (IMaSS), Nagoya Univ.(Japan), 3. Showa Denko K. K.(Japan), 4. National Inst. of Advanced Indus. Sci. and Tech. (AIST)(Japan), 5. GaN Advanced Device Open Innovation Lab. (GaN-OIL), National Inst. of Advanced Indus. Sci. and Tech. (AIST)(Japan))

9:30 AM - 9:45 AM

[Tu-1B-03] Synchrotron X-ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC Substrate Wafers

*Tuerxun Ailihumaer¹, Balaji Raghothamachar¹, Michael Dudley¹, Gil Chung², Ian Manning², Edward Sanchez² (1. Stony Brook Univ.(United States of America), 2. Dupont Co.(United States of America))

9:45 AM - 10:00 AM

[Tu-1B-04] Analysis of Prismatic Dislocations in 4H-SiC Crystals by Multiple-beam Diffraction Topography

*Isaho Kamata¹, Norihiro Hoshino¹, Yuichiro Tokuda², Takahiro Kanda², Naohiro Sugiyama², Hironari Kuno², Hidekazu Tsuchida¹ (1. Central Res. Inst. of Electric Power Industry (CRIEPI)(Japan), 2. DENSO CORPORATION(Japan))

10:00 AM - 10:15 AM

[Tu-1B-05] Lattice Plane Distortions Introduced by Epilayer Growth of SiC wafers

*Nadeemullah A Mahadik¹, Robert E Stahlbush¹, Stanislav Stoupin², Hrishikesh Das³, Peter Bonanno¹, Albert Macrander⁴ (1. Naval Research Laboratory(United States of America), 2. Cornell High Energy Synchrotron Source, Cornell Univ.(United States of America), 3. On Semiconductor(United States of America), 4. Argonne National Lab.(United States of America))

Session information