08:45 〜 09:15
K. Konishi1, R. Fujita1, K. Kobayashi1, A. Yoneyama1, Y. Mori1, *AKIO SHIMA1 (1. Research & Development Group, Hitachi, Ltd.(Japan))
Oral Presentation
Characterization and Defect Engineering
2019年10月1日(火) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)
08:45 〜 09:15
K. Konishi1, R. Fujita1, K. Kobayashi1, A. Yoneyama1, Y. Mori1, *AKIO SHIMA1 (1. Research & Development Group, Hitachi, Ltd.(Japan))
09:15 〜 09:30
*Fumihiro Fujie1, Shunta Harada1,2, Hiromasa Suo3,4, Tomohisa Kato4, Toru Ujihara1,2,5 (1. Department of Materials Process and Eng., Nagoya Univ.(Japan), 2. Center for Integrated Res. of Future Electronics (CIRFE), Inst. of Materials and Systems for Sustainability (IMaSS), Nagoya Univ.(Japan), 3. Showa Denko K. K.(Japan), 4. National Inst. of Advanced Indus. Sci. and Tech. (AIST)(Japan), 5. GaN Advanced Device Open Innovation Lab. (GaN-OIL), National Inst. of Advanced Indus. Sci. and Tech. (AIST)(Japan))
09:30 〜 09:45
*Tuerxun Ailihumaer1, Balaji Raghothamachar1, Michael Dudley1, Gil Chung2, Ian Manning2, Edward Sanchez2 (1. Stony Brook Univ.(United States of America), 2. Dupont Co.(United States of America))
09:45 〜 10:00
*Isaho Kamata1, Norihiro Hoshino1, Yuichiro Tokuda2, Takahiro Kanda2, Naohiro Sugiyama2, Hironari Kuno2, Hidekazu Tsuchida1 (1. Central Res. Inst. of Electric Power Industry (CRIEPI)(Japan), 2. DENSO CORPORATION(Japan))
10:00 〜 10:15
*Nadeemullah A Mahadik1, Robert E Stahlbush1, Stanislav Stoupin2, Hrishikesh Das3, Peter Bonanno1, Albert Macrander4 (1. Naval Research Laboratory(United States of America), 2. Cornell High Energy Synchrotron Source, Cornell Univ.(United States of America), 3. On Semiconductor(United States of America), 4. Argonne National Lab.(United States of America))
要旨・抄録、PDFの閲覧には参加者用アカウントでのログインが必要です。参加者ログイン後に閲覧・ダウンロードできます。
» 参加者用ログイン