[Tu-2B] Sublimation Bulk Growth

2019年10月1日(火) 10:45 〜 12:30 Annex Hall 2 (Kyoto International Conference Center)

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10:45 〜 11:15

[Tu-2B-01(Invited)] Status of Large Diameter Semi Insulating and N-Type Single Crystals at II-VI Advanced Materials

*Rajan Rengarajan¹, A. Gupta¹, X. Xu¹, K. Yang¹, I. Zwieback¹, G. Ruland¹ (1. II-VI Advanced Materials(United States of America))

11:15 〜 11:30

[Tu-2B-02] Growth of 50 mm useable height 150 mm 4H-SiC, defect conversion and reduction by thermal treatment and their characterization

*SRaghavan Parthasarathy¹, Roman Drachev¹, Bob Berliner¹, Bala Bathey¹, Henry Chou¹ (1. GT Advanced Technologies Tech(United States of America))

11:30 〜 11:45

[Tu-2B-03] Growth and Characterization of Al-Doped p-type 4H-SiC Grown by PVT

*Kazuma Eto¹, Hiromasa Suo^1,2, Tomohisa Kato¹, Hajime Okumura¹ (1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan), 2. Showa Denko K. K.(Japan))

11:45 〜 12:00

[Tu-2B-04] Prospects of bulk growth of 3C-SiC using sublimation growth

*Peter J Wellmann¹, Philipp Schuh¹, M. Schöler¹, J. Steiner¹, M. Zielinski², M. Mauceri³, G. Litrico⁴, F. La Via⁴ (1. Univ. of Erlangen (FAU)(Germany), 2. NOVASIC(France), 3. LPE S.P.A.(Italy), 4. CNR-IMM(Italy))

12:00 〜 12:15

[Tu-2B-05] PVT Growth and Manufacturing of 2-Inch AlN Single Crystal Substrates

*Rafael Dalmau¹, Jeffrey Britt¹, Raoul Schlesser¹ (1. HexaTech, Inc.(United States of America))

12:15 〜 12:30

[Tu-2B-06LN] Investigation of Dislocation Behavior at the Early Stage of PVT-grown 4H-SiC Crystals

*Tuerxun Ailihumaer¹, Balaji Raghothamachar¹, Michael Dudley¹, Gilyong Chung², Ian Manning², Edward Sanchez² (1. Stony Brook Univ.(United States of America), 2. DuPont Inc.(United States of America))

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