[We-1A] Interface Defect Structures

Wed. Oct 2, 2019 8:45 AM - 10:15 AM Room A (Kyoto International Conference Center)

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8:45 AM - 9:00 AM

[We-1A-01] Systematic investigation of carbon-related defects in SiC (0001)/SiO₂ systems: A hybrid density functional study

*Takuma Kobayashi¹, Yu-ichiro Matsushita¹ (1. Tokyo Inst. of Tech.(Japan))

9:00 AM - 9:15 AM

[We-1A-02] The P_bC (carbon dangling bond) center at 4H-SiC(0001)/SiO₂ interface: An EDMR study

*Takahide Umeda¹, Takuma Kobayashi², Yu-ichro Matsushita², Eito Higa¹, Hiroshi Yano¹, Mitsuru Sometani³, Shinsuke Harada³ (1. Univ. of Tsukuba(Japan), 2. Tokyo Inst. of Tech.(Japan), 3. AIST(Japan))

9:15 AM - 9:30 AM

[We-1A-03] Effects of nitrogen on density of states at MOSFET interface

*Mark Anders¹, Patrick M Lenahan², Arthur H Edwards³, Peter A Schultz⁴, Renee M Van Ginhoven³ (1. National Institute of Standards and Technology(United States of America), 2. Pennsylvania State University(United States of America), 3. Air Force Research Laboratory(United States of America), 4. Sandia National Laboratories(United States of America))

9:30 AM - 9:45 AM

[We-1A-04] A Comparison of Nitric Oxide Annealing and Barium Passivation of the 4H-SiC/SiO₂ Interface with Electrically Detected Magnetic Resonance

*James P. Ashton¹, Patrick M. Lenahan¹, Daniel J. Lichtenwalner², Mark A. Anders³, Aivars J. Lelis⁴ (1. Penn State Univ.(United States of America), 2. Wolfspeed, a Cree Company(United States of America), 3. National Inst. of Standards and Tech.(United States of America), 4. United States Army Res. Labs.(United States of America))

9:45 AM - 10:00 AM

[We-1A-05] Ab-initio study on surface structure of 4H-SiC(0-33-8)

*Yu-ichiro Matsushita¹, Tetsuo Hatakeyama² (1. Tokyo Inst. of Tech.(Japan), 2. Toyama Prefectural Univ.(Japan))

10:00 AM - 10:15 AM

[We-1A-06] Electrically-detected-magnetic-resonance study on interface defects at a-face and m-face 4H-SiC/SiO₂ interfaces

*Eito Higa¹, Mitsuru Sometani², Shinsuke Harada², Hiroshi Yano¹, Takahide Umeda¹ (1. Univ. of Tsukuba.(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

Session information

[We-1A] Interface Defect Structures

[We-1A-01] Systematic investigation of carbon-related defects in SiC (0001)/SiO₂ systems: A hybrid density functional study

[We-1A-02] The P_bC (carbon dangling bond) center at 4H-SiC(0001)/SiO₂ interface: An EDMR study

[We-1A-03] Effects of nitrogen on density of states at MOSFET interface

[We-1A-04] A Comparison of Nitric Oxide Annealing and Barium Passivation of the 4H-SiC/SiO₂ Interface with Electrically Detected Magnetic Resonance

[We-1A-05] Ab-initio study on surface structure of 4H-SiC(0-33-8)

[We-1A-06] Electrically-detected-magnetic-resonance study on interface defects at a-face and m-face 4H-SiC/SiO₂ interfaces

Authentication

Session information

[We-1A] Interface Defect Structures

[We-1A-01] Systematic investigation of carbon-related defects in SiC (0001)/SiO2 systems: A hybrid density functional study

[We-1A-02] The PbC (carbon dangling bond) center at 4H-SiC(0001)/SiO2 interface: An EDMR study

[We-1A-03] Effects of nitrogen on density of states at MOSFET interface

[We-1A-04] A Comparison of Nitric Oxide Annealing and Barium Passivation of the 4H-SiC/SiO2 Interface with Electrically Detected Magnetic Resonance

[We-1A-05] Ab-initio study on surface structure of 4H-SiC(0-33-8)

[We-1A-06] Electrically-detected-magnetic-resonance study on interface defects at a-face and m-face 4H-SiC/SiO2 interfaces

Authentication

[We-1A-01] Systematic investigation of carbon-related defects in SiC (0001)/SiO₂ systems: A hybrid density functional study

[We-1A-02] The P_bC (carbon dangling bond) center at 4H-SiC(0001)/SiO₂ interface: An EDMR study

[We-1A-04] A Comparison of Nitric Oxide Annealing and Barium Passivation of the 4H-SiC/SiO₂ Interface with Electrically Detected Magnetic Resonance

[We-1A-06] Electrically-detected-magnetic-resonance study on interface defects at a-face and m-face 4H-SiC/SiO₂ interfaces