[We-1B] High Temperature and IC

2019年10月2日(水) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)

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08:45 〜 09:15

[We-1B-01(Invited)] High Temperature Gate Driving Technology with Galvanic Isolation for Integrated SiC Power Modules

*Zhong Chen¹, A Mantooth¹ (1. Department of Electrical Engineering, University of Arkansas(United States of America))

09:15 〜 09:30

[We-1B-02] Impact of Channel Implantation on a 4H-SiC Operational Amplifier for High Temperature Applications

*Matthaeus Albrecht¹, David Pérez¹, Roric C. Martens¹, Anton J. Bauer², Tobias Erlbacher² (1. Friedrich-Alexander-Univ. Erlangen-Nürnberg(Germany), 2. Fraunhofer IISB(Germany))

09:30 〜 09:45

[We-1B-03] Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

*David J Spry¹, Philip G Neudeck¹, Carl W Chang² (1. NASA(United States of America), 2. Vantage Partners LLC(United States of America))

09:45 〜 10:00

[We-1B-04] 4H-SiC RESURF n-LDMOS transistor in high voltage integrated circuits

*Julietta Weisse¹, Christian Matthus², Heinz Mitlehner², Tobias Erlbacher² (1. Friedrich-Alexander-University Erlangen-Nuremberg(Germany), 2. Fraunhofer Institute of Integrated Systems and Device Technology(Germany))

10:00 〜 10:15

[We-1B-05LN] Silicon Carbide detectors for high energy ions and neutrons

*Francesco La Via¹, Salvatore Tudisco², Clementina Agodi², Francesco Cappuzzello^2,5, Antonello Santangelo³, Massimo Zimbone¹, Marco Mauceri⁴ (1. CNR-IMM(Italy), 2. INFN-LNS(Italy), 3. STMicroelectronics(Italy), 4. LPE(Italy), 5. Physics Department, University of Catania(Italy))

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