[Th-1A] Testing and Radiation

2019年10月3日(木) 08:45 〜 10:15 Room A (Kyoto International Conference Center)

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08:45 〜 09:15

[Th-1A-01(Invited)] Accelerated Testing of SiC Power Devices for Predicting Device Lifetime under High-Field Operating Conditions

Daniel J Lichtenwalner¹, Shadi Sabri¹, Edward Van Brunt¹, Brett Hull¹, Sei-Hyung Ryu¹, Jae-Hyung Park¹, Satyaki Ganguly¹, *Donald A. Gajewski¹, Scott Allen¹, John W. Palmour¹ (1. Wolfspeed, a Cree Company(United States of America))

09:15 〜 09:30

[Th-1A-02] Aging and failure mechanisms of SiC Power MOSFETs under repetitive short-circuit pulses of different duration

*Alberto Castellazzi¹, Alessandro Borghese³, Francois Boige², Vanessa Chazal⁴ (1. University of Nottingham(UK), 2. LAPLACE - University of Toulouse(France), 3. University of Naples "Federico II"(Italy), 4. THALES(France))

09:30 〜 09:45

[Th-1A-03] Investigations on the Resistance Reduction Effect of Double-Trench SiC MOSFETs under Repetitive Avalanche Stress

*Jiaxing Wei¹, Siyang Liu¹, Sheng Li¹, Lizhi Tang¹, Rongcheng Lou¹, Hao Fu¹, Hangbo Zhao¹, Weifeng Sun¹, Xiaobing Zhang², Song Bai³ (1. National ASIC System Eng. Res. Center, School of Electronics Sci. and Eng., Southeast Univ.(China), 2. School of Electronics Sci. and Eng., Southeast Univ.(China), 3. State Key Lab. of Wide-bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Device Inst.(China))

09:45 〜 10:00

[Th-1A-04] New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

*Arthur Witulski¹, Robert A. Johnson¹, Scooter R. Ball¹, Michael L. Alles¹, Robert A. Reed¹, Ronald D. Schrimpf¹, John M. Hutson³, Arto Javanainen, Jean-Marie Lauenstein² (1. Vanderbilt Univ.(United States of America), 2. National Institute of Aeronautics and Aerospace(United States of America), 3. Lipscomb Univ. (United States of America))

10:00 〜 10:15

[Th-1A-05] Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-induced Failure

*Yaren Huang¹, Benedikt Lechner¹, Gerhard Wachutka¹ (1. Technical Univ. of Munich(Germany))

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