[Th-2A] Device Processing

2019年10月3日(木) 10:45 〜 12:15 Room A (Kyoto International Conference Center)

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10:45 〜 11:15

[Th-2A-01(Invited)] Improved Al2O3 gate technology for high-power and high-frequency GaN transistors

*Tamotsu Hashizume^1,2 (1. Research Center for Integrated Quantum Electronics, Hokkaido Univ.(Japan), 2. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya Univ.(Japan))

11:15 〜 11:30

[Th-2A-02] Current transport mechanisms in Au-free metallizations for CMOS compatible GaN HEMT technology

*Fabrizio Roccaforte¹, Monia Spera^1,2,3, Salvatore Di Franco¹, Corrado Bongiorno¹, Raffaella Lo Nigro¹, Patrick Fiorenza¹, Filippo Giannazzo¹, Giuseppe Greco¹ (1. CNR-IMM(Italy), 2. University of Catania(Italy), 3. University of Palermo(Italy))

11:30 〜 11:45

[Th-2A-03] The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power Devices

Noah Opondo¹, *James A Cooper², Hangjie Liao¹, Weinong W. Chen¹, Dallas T. Morrisette¹ (1. Purdue Univ.(United States of America), 2. Sonrisa Research, Inc., and Purdue Univ.(United States of America))

11:45 〜 12:00

[Th-2A-04] Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate

*Mitsuaki Kaneko^1,2, Alexander Tsibizov², Tsunenobu Kimoto¹, Ulrike Grossner² (1. Kyoto Univ.(Japan), 2. ETH Zurich(Switzerland))

12:00 〜 12:15

[Th-2A-05] Investigating the Influence of Al Ion Implantation and Post-Implantation Annealing on the Near-Surface Area of 4H-SiC

*Johanna Mueting¹, Viktor Bobal², Marc Georg Willinger¹, Steffen Reidt³, Lasse Vines², Ulrike Grossner¹ (1. ETH Zurich(Switzerland), 2. University of Oslo(Norway), 3. IBM Research(Switzerland))

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