[Th-1B] Extended Defects II

2019年10月3日(木) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)

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08:45 〜 09:15

[Th-1B-01(Invited)] Statistical analysis of killer and non-killer defects in SiC and impacts to device performance

*Hrishikesh Das¹, S Sunkari¹, J Justice¹, H Pham², G Park² (1. ON Semiconductor, South Portland(United States of America), 2. ON Semiconductor, Bucheon(Korea))

09:15 〜 09:30

[Th-1B-02] From wafers to bits and back again: using deep learning to accelerate the development and characterization of SiC material

*Robert T Leonard¹, Matthew Conrad¹, Edward Van Brunt¹, Jeffrey Giles¹, Alexander K Shveyd¹, Elif Balkas¹ (1. Wolfspeed(United States of America))

09:30 〜 09:45

[Th-1B-03] Formation of double Shockley stacking faults in heavily nitrogen doped 4H-SiC crystal with reduction of residual stress around scratch damage

*Naohiro Sugiyama^1,2, Takeshi Mitani², Isaho Kamata³, Tomohisa Kato², Hidekazu Tsuchida³, Hajime Okumura² (1. DENSO Corp.(Japan), 2. Advanced Indus. Sci. and Tech.(Japan), 3. Central Res. Inst. of Electric Power Industry(Japan))

09:45 〜 10:00

[Th-1B-04] BPD-TED Conversion in the SiC substrate after High-Temperature Si-VE

*Yusuke Sudoh¹, Makoto Kitabatake¹, Tadaaki Kaneko² (1. Toyo Tanso Corp.(Japan), 2. Kwansei Gakuin Univ.(Japan))

10:00 〜 10:15

[Th-1B-05] 2D extended defects interaction: the case of grain boundary and stacking faults in 3C-SiC

*Massimo Zimbone¹, Corrado Bongiorno¹, Cristiano Calabretta², Francesco La Via¹ (1. CNR-Inst. for Microelectronics and Microsystems (Italy)(Italy), 2. MIFT, Univ. degli studi di Messina(Italy))

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