[Fr-2A] Bipolar Power Transistors

Fri. Oct 4, 2019 10:30 AM - 12:00 PM Room A (Kyoto International Conference Center)

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10:30 AM - 11:00 AM

[Fr-2A-01(Invited)] Next-Generation High- to Ultra-High-Voltage SiC Power Devices

*Yoshiyuki Yonezawa¹, K. Nakayama¹, R. Kosugi¹, S. Harada¹, K. Kojima¹, T. Kato¹, H. Tsuchida², T. Kimoto³, H. Okumura¹ ( 1. National Institute of Advanced Industrial Science and Technology(AIST)(Japan), 2. Central Research Institute of Electric Power Industry(Japan), 3. Department of Electronic Science & Engineering, Kyoto University(Japan))

11:00 AM - 11:15 AM

[Fr-2A-02] Enhancement of Conductivity Modulation in SiC Bipolar Junction Transistors by Decreasing Base Spreading Resistance

*Satoshi Asada¹, Mitsuaki Kaneko¹, Jun Suda¹, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan))

11:15 AM - 11:30 AM

[Fr-2A-03] A Comparison of Bipolar and Unipolar SiC Devices for Medium Voltage Switching Applications

*Edward Robert Van Brunt¹, Sei-Hyung Ryu¹, Michael O'Loughlin¹, Brandon Passmore¹, Zach Cole¹, Adam Barkley¹, Shadi Sabri¹, Daniel J. Lichtenwalner¹, Brett Hull¹, Kraig Olejniczak¹, Scott Allen¹, John Palmour¹ (1. Wolfspeed, A Cree Company(United States of America))

11:30 AM - 11:45 AM

[Fr-2A-04] Experimental demonstration of the SOA ruggedness in 13 kV SiC-IGBT

*Kazuya Konishi¹, Kenji Hamada¹, Hiroaki Okabe¹, Yusuke Miyata¹, Hiroki Niwa¹, Kohei Ebihara¹, Kotaro Kawahara¹, Naoyuki Kawabata¹, Shingo Tomohisa¹, Naruhisa Miura¹ (1. Mitsubishi Electric Corporation(Japan))

11:45 AM - 12:00 PM

[Fr-2A-05] 20kV-class Ultra-High Voltage 4H-SiC n-IE-IGBTs

*AKIHIRO KOYAMA^1,2, Yuji Kiuchi^1,3, Tomonori Mizushima^1,4, Kensuke Takenaka^1,4, Shinichiro Matsunaga^1,4, Mitsuru Sometani¹, Koji Nakayama¹, Hitoshi Ishimori¹, Atsuko Kimoto¹, Manabu Takei^1,4, Tomohisa Kato¹, Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1. AIST(Japan), 2. Mitsubishi Electric Corp.(Japan), 3. New Japan Radio Co. Ltd.(Japan), 4. Fuji Electric Co. Ltd.(Japan))

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