セッション情報

Oral Presentation

Characterization and Defect Engineering

[Fr-1B] Novel Materials and Concepts

2019年10月4日(金) 08:45 〜 10:00 Annex Hall 2 (Kyoto International Conference Center)

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08:45 〜 09:15

[Fr-1B-01(Invited)] Ga2O3 from materials to devices

*Martin Albrecht¹, R. Schewski¹, C. Wouters¹, A. Fielder¹, K. Irmscher¹, Z. Galazka¹, S. Bin Anooz¹, M. Baldini¹, A. Popp¹ (1. Leibniz-Institut für Kristallzüchtung(Germany))

09:15 〜 09:30

[Fr-1B-02] Deep Level Study of Chlorine-based Dry Etched beta-Ga₂O₃

*Giovanni Alfieri¹, Philippe Godignon², Andrei Mihaila¹, Lasse Vines³ (1. ABB(Switzerland), 2. CNM(Spain), 3. Oslo Univ.(Norway))

09:30 〜 09:45

[Fr-1B-03] High Performance 3C-SiC Photocathode with Texture Structure Formed by Electrochemical Etching

*Masashi Kato¹, Tomohiro Ambe¹ (1. Nagoya Inst. of Tech.(Japan))

09:45 〜 10:00

[Fr-1B-04LN] Precise Placement of V_Si in 4H-SiC Using Li⁺ Implantation for Quantum Technologies

Shojan P. Pavunny¹, *Rachael L Myers-Ward¹, D. K. Gaskill¹, Edward Bielejec², Hunter Banks¹, Andrew L. Yeats¹, Matthew T. DeJarld³, Samuel Carter¹ (1. US Naval Research Laboratory(United States of America), 2. Sandia National Laboratories(United States of America), 3. Raytheon(United States of America))

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