Session information

Oral Presentation

Growth and Wafer Manufacturing

[Fr-2B] Wafer Manufacturing

Fri. Oct 4, 2019 10:30 AM - 11:45 AM Annex Hall 2 (Kyoto International Conference Center)

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10:30 AM - 11:00 AM

[Fr-2B-01(Invited)] Fabrication of damage-free atomically smooth SiC surface using pure water and Ni catalyst

*Daisetsu Toh¹, Ryousuke Ohnishi¹, Pho Van Bui¹, Satoshi Matsuyama¹, Yasuhisa Sano¹, Kazuto Yamauchi¹ (1. Osaka Univ.(Japan))

11:00 AM - 11:15 AM

[Fr-2B-02] An approach to predict 4H-SiC wafer bending after back side thinning by substrate resistivity analysis

*Nicolo Piluso¹ (1. STMicroelectronics(Italy))

11:15 AM - 11:30 AM

[Fr-2B-03] Slurryless electrochemical mechanical polishing of 4H-SiC (0001) surfaces

*Xu Yang¹, Xiaozhe Yang¹, Kentaro Kawai¹, Kenta Arima¹, Kazuya Yamamura¹ (1. Osaka University(Japan))

11:30 AM - 11:45 AM

[Fr-2B-04] Direct bonding of diamond substrate at low temperatures under atmospheric condition

*Takashi Matsumae¹, Yuichi Kurashima¹, Hitoshi Umezawa¹, Hideki Takagi¹ (1. Ntl. Inst. of Adv. Ind. Sci. and Tech.(Japan))

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