[Fr-3B] Device-related Characterization

Fri. Oct 4, 2019 1:00 PM - 2:15 PM Annex Hall 2 (Kyoto International Conference Center)

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1:00 PM - 1:15 PM

[Fr-3B-01] Ultrabright Single-Photon Emission from Color Centers in Silicon Carbide under Electrical Excitation

*Dmitry Yu Fedyanin¹, Igor A. Khramtsov¹, Andrey A. Vyshnevyy¹ (1. Moscow Institute of Physics and Technology(Russia))

1:15 PM - 1:30 PM

[Fr-3B-02] Electrically Detected Electron Nuclear Double Resonance in 4H-SiC Bipolar Junction Transistors

*Ryan J. Waskiewicz¹, Brian R. Manning¹, Duane J. McCrory¹, Patrick M. Lenahan¹ (1. The Pennsylvania State Univ.(United States of America))

1:30 PM - 1:45 PM

[Fr-3B-03] Investigation of Bipolar Degradation of the Base-Collector-Diode of 1.2 kV BJTs under Different Current and Temperature Conditions

*Sarah Rugen¹, Nando Kaminski¹, Siddarth Sundaresan², Ranbir Singh² (1. Univ. of Bremen(Germany), 2. GeneSiC Semiconductor(United States of America))

1:45 PM - 2:00 PM

[Fr-3B-04] Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress

*Patrick Fiorenza¹, Mario S. Alessandrino², Beatrice Carbone², Clarice Di Martino², Alfio Russo², Mario Saggio², Carlo Venuto², Edoardo Zanetti², Corrado Bongiorno¹, Filippo Giannazzo¹, Fabrizio Roccaforte¹ (1. Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi, Catania(Italy), 2. STMicroelectronics, Catania(Italy))

2:00 PM - 2:15 PM

[Fr-3B-05LN] Microscopic FCA system for carrier lifetime measurement in SiC with high spatial resolution

*Keisuke Nagaya¹, Takashi Hirayama¹, Takeshi Tawara^2,3, Koichi Murata⁴, Hidekazu Tsuchida⁴, Akira Miyasaka⁵, Kazutoshi Kojima³, Tomohisa Kato³, Hajime Okumura³, Masashi Kato¹ (1. Nagoya Inst.(Japan), 2. Fuji Electric Co., Ltd.(Japan), 3. AIST(Japan), 4. CRIEPI(Japan), 5. Showa Denko(Japan))

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