Session information

Tutorial

[TS] SiC-MOSFETs; Features and Applications

Sun. Sep 29, 2019 10:30 AM - 5:00 PM Room A (Kyoto International Conference Center)

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10:30 AM - 11:15 AM

[TS-01] Device Design and Characteristics of SiC MOSFETs

*Noriyuki Iwamuro¹ (1. University of Tsukuba)

11:15 AM - 12:00 PM

[TS-02] SiC Power Device Reliability Considerations

*Philip Mawby¹ (1. University of Warwick)

Lunch (12:00 PM - 1:30 PM)

1:30 PM - 2:15 PM

[TS-03] Packaging and Modules with SiC MOSFETs and Related Reliability Aspects

*Josef Lutz¹ (1. Chemnitz University of Technology)

2:15 PM - 3:00 PM

[TS-04] Driving Methods for SiC Devices at High-Frequencies

*Juan Rivas-Davila¹ (1. Stanford University)

Break (3:00 PM - 3:30 PM)

3:30 PM - 4:15 PM

[TS-05] Multi-Level Inverter Topologies for Full Exploitation of SiC MOS Characteristics

*Alberto Castellazzi¹ (1. Kyoto University of Advanced Science)

4:15 PM - 5:00 PM

[TS-06] SiC MOSFETs at Industrial Applications – Addressing Challenges and Reaping Benefits

*Samuel Araujo¹ (1. Robert Bosch GmbH)

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