16:15 〜 18:15

[IP-01(Invited)] SiC epitaxial reactor cleaning by ClF₃ gas with the help of reaction heat

Keisuke Kurashima¹, Masaya Hayashi¹, *Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1. Yokohama National University(Japan), 2. NuFlare Technology, Inc(Japan), 3. KANTO DENKA KOGYO CO., LTD(Japan))

16:15 〜 18:15

[IP-02(Invited)] Silicon vacancy related defects in 4H SiC for quantum technology

*Andras Csore¹, Nguyen Tien Son², Ivan Gueorguiev Ivanov², Adam Gali^1,3 (1. Budapest Univ. of Tech. and Economics(Hungary), 2. Linköping Univ.(Sweden), 3. Wigner Res. Centre for Physics, HAS(Hungary))

16:15 〜 18:15

[IP-03(Invited)] Evaluation of the influence of Al⁺ implantation on the forward degradation of SiC bipolar devices

*teruaki kumazawa^1,2, Masakazu Baba², Yusuke Yamashiro², Mariko Hayashi^2,3, Manabu Takei^2,4, Kimimori Hamada¹, Shinsuke Harada², Yoshiyuki Yonezawa², Hajime Okumura² (1. Toyota Motor Corp.(Japan), 2. National Institute of Advanced Industrial Sience and Technology(AIST)(Japan), 3. DENSO CORP.(Japan), 4. Fuji Electric Co., Ltd.(Japan))

16:15 〜 18:15

[IP-04(Invited)] Electrical Parameters Degradations of p-GaN HEMTs under Repetitive UIS Stress

*Sheng Li¹, Siyang Liu¹, Chi Zhang¹, Jiaxing Wei¹, Weifeng Sun¹, Yiheng Li², Zhichao Yang² (1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))

16:15 〜 18:15

[Tu-P-01] 3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress

*Francesco La Via¹, Marco Mauceri², Cristiano Calabretta¹, Massimo Zimbone¹, Ruggero Anzalone³ (1. CNR-IMM(Italy), 2. LPE(Italy), 3. STMicroelectronics(Italy))

16:15 〜 18:15

[Tu-P-02] Effect of Material Loss through the Porous Crucible on SiC Bulk Crystal Growth

*Mark Ramm¹, M. Arzig², M. Bogdanov¹, A. Denisov³, A. Kulik¹, B. Mamin⁴, V. Neverov⁴, R. Sidorov⁴, D. Skvortsov⁴, B. Spill³, J. Steiner², P. Wellmann² (1. STR Group, Inc.(Russia), 2. Univ. Erlangen-Nürnberg(Germany), 3. PVA Crystal Growing Systems GmbH(Germany), 4. National Research Ogarev Mordovia State Univ.(Russia))

16:15 〜 18:15

[Tu-P-03] Process design of aluminum nitride bulk crystal growth on sapphire seed via physical vapor transport method

*Seong-Min Jeong¹, Yong-Jin Kwon¹, Si-Young Bae¹, Jae-Hwan Pee², Younghee Kim¹, Won-Jae Lee³, Soonil Lee⁴ (1. Inst. of Ceramic Eng. and Tech.(Korea), 2. Inst. of Ceramic Eng. and Tech. Icheon branch(Korea), 3. Department of Advanced Materials Engineering, Dong-Eui Univ.(Korea), 4. School of Materials Science and Engineering, Changwon National Univ.(Korea))

16:15 〜 18:15

[Tu-P-04] Improvement of Growth Interface Stability for 4-inch Silicon Carbide Crystal Growth Using TSSG

*Botao Liu¹, Xia Tang¹, Bing Gao¹ (1. Wuhan Univ(China))

16:15 〜 18:15

[Tu-P-05] Dissolution of carbon into Si-Cr solvent in solution growth of SiC by TSSG method

*Toshinori Taishi¹, Koangyong Hyun², Masaru Takahashi¹, Naomichi Tsuchimoto¹, Koki Suzuki¹ (1. Shinshu Univ.(Japan), 2. Mokpo National Maritime Univ.(Korea))

16:15 〜 18:15

[Tu-P-06] Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates

Johannes Reiprich¹, Nishchay A Isaac¹, Marcus Hopffeld¹, *Joerg Pezoldt¹, Heiko O. Jacobs¹ (1. TU Ilmenau(Germany))

16:15 〜 18:15

[Tu-P-07] Formation of an AlN intermediate layer on off-axis Si(110) substrate and a SiC seed layer thereon for SiC heteroepitaxy on Si

Yuki Nara¹, Hiroki Kasai¹, *Hideki Nakazawa¹ (1. Hirosaki Univ.(Japan))

16:15 〜 18:15

[Tu-P-08] Cause of etch pits during the high speed plasma etching of silicon carbide and an approach to reduce their size

*Yuma Nakanishi¹, Risa Mukai¹, Satoshi Matsuyama¹, Kazuto Yamauchi^1,2, Yasuhisa Sano¹ (1. Department of Precision Sci. and Tech., Graduate School of Eng., Osaka Univ.(Japan), 2. Res. Center of Ultra-Precision Sci. and Tech., Graduate School of Eng., Osaka Univ.(Japan))

16:15 〜 18:15

[Tu-P-09] A study of sublimation-controlled confinement etching of SiC as a CMP-free damage-less wafer manufacturing process

*Tadaaki Kaneko¹, Masatake Nagaya², Kazufumi Aoki¹, Daichi Doujima¹ (1. Kwansei Gakuin Univ(Japan), 2. DENSO CORPORATION(Japan))

16:15 〜 18:15

[Tu-P-10] Etching rate profile of C-face 4H-SiC wafer depending on total gas flow rate of chlorine trifluoride and nitrogen

Kenta Irikura¹, Ryohei Kawasaki¹, *Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1. Yokohama National University(Japan), 2. KANTO DENKA KOGYO CO., LTD.(Japan), 3. AIST(Japan))

16:15 〜 18:15

[Tu-P-11] Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

*Matthias Widmann¹, Matthias Niethammer¹, Dmitry Yu. Fedyanin², Igor A. Khramtsov², Torsten Rendler¹, Ian D. Booker³, Jawad Ul Hassan³, Naoya Morioka¹, Roland Nagy¹, Yu-Chen Chen¹, Ivan G. Ivanov³, Nguyen Tien Son³, Takeshi Ohshima⁴, Michel Bockstedte^5,6, Adam Gali⁷, Cristian Bonato⁸, Sang-Yun Lee⁹, Jörg Wrachtrup¹ (1. 3rd Inst. of Physics, Univ. of Stuttgart(Germany), 2. Lab. of Nanooptics and Plasmonics, Moscow Inst. of Physics and Tech.(Russia), 3. Dep. of Physics, Chemistry and Biology, Linköping Univ.(Sweden), 4. National Inst. for Quantum and Radiological Sci. and Tech.(Japan), 5. Dep. Chemistry and Physics of Materials, Univ. of Salzburg(Austria), 6. Solid State Theory, Univ. of Erlangen-Nuremberg(Germany), 7. Hungarian Academy of Sci., Wigner Research Centre for Physics(Hungary), 8. Inst. of Photonics and Quantum Sci., SUPA, Heriot-Watt Univ.(UK), 9. Center for Quantum Information, Korea Inst. of Sci. and Tech.(Korea))

16:15 〜 18:15

[Tu-P-12] Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC

*Takuma Narahara¹, Shinichiro Sato², Kazutoshi Kojima³, Yuichi Yamazaki², Yasuto Hijikata¹, Takeshi Ohshima² (1. Saitama Univ.(Japan), 2. National Insts. for Quantum and Radiological Sci. and Tech.(Japan), 3. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

16:15 〜 18:15

[Tu-P-13] Erbium and defect luminescence in SiC nano-pillars

*Brett Cameron Johnson¹, Ryan A Parker¹, Nikolai Dontschuk¹, Athavan Nadarajah¹, Jeffrey C McCallum¹ (1. Univ. of Melbourne(Australia))

16:15 〜 18:15

[Tu-P-14] Photoluminescence analysis of individual partial dislocations in 4H-SiC epilayers

*Johji Nishio¹, Aoi Okada¹, Chiharu Ota¹, Mitsuhiro Kushibe¹ (1. Toshiba Corp.(Japan))

16:15 〜 18:15

[Tu-P-15] Influence of basal-plane dislocation depth and core-structure on stacking fault expansion in forward-current degradation of 4H-SiC p-i-n diodes

*Shohei Hayashi^1,2, Tamotsu Yamashita^1,3, Junji Senzaki¹, Tomohisa Kato¹, Yoshiyuki Yonezawa¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1. AIST(Japan), 2. Toray Research Center, Inc.(Japan), 3. Showa Denko K.K.(Japan))

16:15 〜 18:15

[Tu-P-16] TEM Studies on The Microstructure of m-face Grown 4H-SiC by Solution Growth

*Junro Takahashi¹, Kotaro Kawaguchi², Kazuhiko Kusunoki², Tomoyuki Ueyama¹, Kazuhito Kamei¹ (1. NIPPON STEEL TECHNOLOGY Co., Ltd.(Japan), 2. Tohoku Univ. Graduate School of Environmental Studies(Japan))

16:15 〜 18:15

[Tu-P-17] Investigation of dislocations inducing leakage currents on SiC junction barrier schottky diode by two-photon-excited band-edge photoluminescence

*Yosuke Nakanishi¹, Tomoaki Noguchi¹, Takuyo Nakamura¹, Masaaki Ikegami¹, Kazuo Kobayashi¹, Kazuya Konishi¹, Kohei Ebihara¹ (1. Mitsubishi Electric Corp.(Japan))

16:15 〜 18:15

[Tu-P-18] Crystalline quality evaluation of SiC p/n column layers formed by trench-filling-epitaxial growth

*Kohei Adachi^1,2, Ryoji Kosugi¹, Shiyang Ji¹, Yasuyuki Kawada^1,3, Hiroyuki Fujisawa^1,3, Shingo Tomohisa², Naruhisa Miura², Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1. National Institute of Advanced Industrial Science and Technology(Japan), 2. Mitsubishi Electric Corp.(Japan), 3. Fuji Electric Co., Ltd.(Japan))

16:15 〜 18:15

[Tu-P-19] Impact of threading dislocations detected by KOH etching on 4H-SiC 650 V MOSFET device failure after reliability test

*Andrea Severino¹, Ruggero Anzalone¹, Nicolo' Piluso¹, Cirino Rapisarda¹, Alfio Russo¹, Beatrice Carbone¹, Santi Alessandrino¹, Salvo Coffa¹ (1. STMicroelectronics(Italy))

16:15 〜 18:15

[Tu-P-20] Structural Characterization of a Ga₂O₃ Epitaxial Layer Grown on a Sapphire Substrate using Cross-sectional and Plan-view TEM/STEM analysis

*Ai Hashimoto¹, Hideki Sako¹, Junichiro Sameshima¹, Yuji Otsuka¹, Masayuki Nakamura², Takayuki Kobayashi², Shinichi Motoyama² (1. Toray Research Center, Inc.(Japan), 2. Samco Inc.(Japan))

16:15 〜 18:15

[Tu-P-21] Damage characterization of GaN substrate with hot implant process

*Junko Maekawa¹, Hitoshi Kawanowa¹, Masahiko Aoki¹, Katsumi Takahiro², Toshiyuki Isshiki² (1. Ion Tech. Center Co.,Ltd(Japan), 2. Kyoto Inst. of Tech.(Japan))

16:15 〜 18:15

[Tu-P-22] Dislocation vector analysis method of deep dislocation having c-axis segment in diamond

*Shinichi Shikata¹, Naoya Akashi¹ (1. Kwansei Gakuin Univ.(Japan))

16:15 〜 18:15

[Tu-P-23] AFM observation of echi-pit shapes on β-Ga₂O₃ (001) surface formed by molten alkali etching

*Kenichi Ogawa¹, Naoya Ogawa¹, Ryo Kosaka¹, Toshiyuki Isshiki¹, Toru Aiso², Masato Iyoki², Yongzhao Yao³, Yukari Ishikawa³ (1. Kyoto Institute of Technology(Japan), 2. Hitachi High-Technologies Corp.(Japan), 3. Japan Fine Ceramics Center(Japan))

16:15 〜 18:15

[Tu-P-24] Monitoring on Creation and Annihilation of Interface Trap Levels with NO Oxidation, Re-Oxidation and N₂ Annealing with Conductance Measurements

*Xiang Zhou¹, Collin W. Hitchcock¹, Rajendra P Dahal¹, Gyanesh Pandey¹, Jacob Kupernik¹, Ishwara B. Bhat¹, T. Paul Chow¹ (1. Rensselaer Polytechnic Institute (RPI)(United States of America))

16:15 〜 18:15

[Tu-P-25] Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETs

*Xiang Zhou¹, Collin W. Hitchcock¹, Poon-man Tang¹, Ishwara Bhat¹, T. Paul Chow¹ (1. Rensselaer Polytechnic Institute (RPI)(United States of America))

16:15 〜 18:15

[Tu-P-26] Ultrafast pulsed I-V and charge pumping interface characterization of low-voltage n-channel SiC MOSFETs

*Mattias Ekstrom¹, B. Gunnar Malm¹, Carl-Mikael Zetterling¹ (1. KTH Royal Institute of Technology(Sweden))

16:15 〜 18:15

[Tu-P-27] Study on Leakage Current Conduction Mechanism at high temperature in Al₂O₃/SiO₂/n-type 4H-SiC MOS Capacitors

*Atsushi Tamura¹, Masahiro Masunaga², Shintaroh Sato², Koji Kita¹ (1. The Univ. of Tokyo(Japan), 2. Hitachi, Ltd. R&D Group(Japan))

16:15 〜 18:15

[Tu-P-28] Identifications of major and minor interface defects at C-face 4H-SiC/SiO₂ interfaces with wet oxidation

*Takahide Umeda¹, Yohei Kagoyama¹, Kazureru Tomita¹, Yuta Abe¹, Mitsuru Sometani², Mitsuo Okamoto², Tetsuo Hatakeyama², Shinsuke Harada² (1. Univ. of Tsukuba(Japan), 2. AIST(Japan))

16:15 〜 18:15

[Tu-P-29] Phosphorous Ion Implantation for 4H-SiC DMOSFETs Source/Drain

*Roberta Nipoti¹, Antonella Parsini², Virginia Boldrini¹, Salvatore Vantaggio², Marco Gorni², Maria Concetta Canino¹, Michele Bellettato¹, Massimo Camarda³, Judith Woerle³, Ulrike Grossner⁴ (1. CNR-IMM unit of Bologna(Italy), 2. Univ. of Parma, DMPCS - CNISM(Italy), 3. PSI, Villigen(Switzerland), 4. ETH Zurich, APS(Switzerland))

16:15 〜 18:15

[Tu-P-30] Investigation on Electrical Characteristics of 4H-SiC Schottky-Barrier-Diodes after Silicon-Cap-Annealing

*Daichi Todo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1. Hiroshima Univ.(Japan))

16:15 〜 18:15

[Tu-P-31] Ohmic contact mechanism of Ni contact to C-faced 4H-n-SiC substrate

*Seongjun Kim¹, Minwho Lim², Hong-Ki Kim¹, Min-Jae Kang¹, Hahye Choi¹, Nam-Suk Lee¹, Tobias Erlbacher², Anton Bauer², Hoon-Kyu Shin¹ (1. Pohang Univ. of Sci. and Tech.(Korea), 2. Fraunhofer Inst. for Integrated Systems and Device Tech. (IISB)(Germany))

16:15 〜 18:15

[Tu-P-32] Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC

*Carsten Hellinger¹, Oleg Rusch¹, Mathias Rommel¹, Anton J. Bauer¹, Tobias Erlbacher¹ (1. Fraunhofer Institute for Integrated Systems and Device Technology (IISB)(Germany))

16:15 〜 18:15

[Tu-P-33] The Ohmic Contact Characteristics of 4H-SiC Power Devices by Plused Laser Annealing and Rapid Thermal Annealing

Ziwei Zhou¹, Jianyong Hao¹, Jun Sun¹, *Zhenzhong Zhang¹, Weiwei He¹, Zedong Zheng² (1. Shenzhen BASiC Semiconductor Ltd.(China), 2. Department of Electrical Engineering, Tsinghua University(China))

16:15 〜 18:15

[Tu-P-34] Al₂O₃/4H-SiC MOS interface characterization with different surface treatments

Isanka Udayani Jayawardhena¹, Ayayi Claude Ahyi¹, Tamara Isaacs-smith¹, Rahul Ramamurthy², Koushik Ramadoss², Chunkun Jiao², Dallas Morisette², Ryan Thorpe³, Leonard C. Feldman³, *Sarit Dhar¹ (1. Auburn Univ.(United States of America), 2. Purdue Univ.(United States of America), 3. Rutgers Univ.(United States of America))

16:15 〜 18:15

[Tu-P-35] Pre-deposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiC

*Minwho Lim¹, Tomasz Sledziewski¹, Mathias Rommel¹, Tobias Erlbacher¹, Hongki Kim², Seongjun Kim², Hoon-Kyu Shin², Anton Bauer¹ (1. Fraunhofer Inst. for Integrated Systems and Device Technology IISB(Germany), 2. Pohang Uni. of Science and Technology POSTECH(Korea))

16:15 〜 18:15

[Tu-P-36] Development of High-Quality Gate Oxides on 4H-SiC Using Atomic Layer Deposition

*Benjamin Renz¹, Oliver James Vavasour¹, Peter Michael Gammon¹, Fan Li¹, Guy William Clarke Baker¹, Philip Mawby¹, Vishal Ajit Shah¹ (1. Univ. of Warwick(UK))

16:15 〜 18:15

[Tu-P-37] Design and optimisation of Schottky contact integration in a 4H-SiC trench MOSFET

*Tianxiang Dai¹, Benjamin Renz¹, Luyang Zhang¹, Guy Baker¹, Vishal Shah¹, Philip Mawby¹, Peter Gammon¹ (1. University of Warwick(UK))

16:15 〜 18:15

[Tu-P-38] Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETs

*Amaury Gendron-Hansen¹, Changsoo Hong¹, Dumitru Sdrulla¹, Bruce Odekirk¹, Avinash Kashyap¹ (1. Microchip Tech. Inc.(United States of America))

16:15 〜 18:15

[Tu-P-39] A Study on Transient Thermal Characterization of SWITCH-MOS

*Shuhei Fukunaga¹, Tsuyoshi Funaki¹, Shinsuke Harada², Yusuke Kobayashi² (1. Osaka Univ.(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

講演取消

16:15 〜 18:15

[Tu-P-40] Withdrawn

16:15 〜 18:15

[Tu-P-41] On-resistance Improvement of SiC MOSFETs by Buried Ion Implantation in JFET Regions

*LI ZHENG¹, Qian Wang¹, Xinhong Cheng^1,2, Shaoyu Liu¹, Dawei Xu¹, Lingyan Shen¹, Tomasz Sledziewski³, Tobias Erlbacher³, Yuehui Yu^1,2 (1. Shanghai Inst. of Microsystem and Info. Tech., Chinese Academy of Sciences(China), 2. Center of Materials Sci. and Optoelectronics Engineering, Univ. of Chinese Academy of Sciences(China), 3. Fraunhofer Inst. for Integrated Systems and Device Technology(Germany))

16:15 〜 18:15

[Tu-P-42] Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance using Calibrated TCAD Model

*Daniel Johannesson^1,2, Keijo Jacobs¹, Staffan Norrga¹, Muhammad Nawaz², Hans-Peter Nee^1,2 (1. KTH, Royal Inst. of Tech.(Sweden), 2. ABB Corporate Research(Sweden))

16:15 〜 18:15

[Tu-P-43] Analyzing 4H-SiC JBS diodes by TCAD process simulation using accurate implantation conditions

*Jonas Buettner¹, Susanne Beuer¹, Silke Petersen¹, Tobias Erlbacher¹, Anton Bauer¹ (1. Fraunhofer Institute for Integrated Systems and Device Technology IISB(Germany))

16:15 〜 18:15

[Tu-P-44] Temperature Dependence of the Bipolar Activation and the Reverse Leakage Currents of 6.5 kV 4H-SiC JBS-Diodes

*Benedikt Lechner¹, Yaren Huang¹, Gerhard Wachutka¹ (1. Technical University of Munich (Germany))

16:15 〜 18:15

[Tu-P-45] Evaluation of SiC-MOSFET by Repetitive UIS Tests for Solid State Circuit Breaker

*Mitsuhiko Sagara¹, Keiji Wada¹, Shin-ichi Nishizawa² (1. Tokyo Metropolitan Univ.(Japan), 2. Kyushu Univ.(Japan))

16:15 〜 18:15

[Tu-P-46] Effect of Proton and Electron Irradiation on Current-Voltage Characteristics of Rectifying Diodes Based on 4H-SiC Structures with Schottky Barrier

Anatoly Markovich Strel'chuk¹, Vitali Vasil'evich Kozlovski², *Alexandr Alexandrovich Lebedev¹ (1. Ioffe Inst.(Russia), 2. Peter the Great St. Petersburg Polytechnic Univ.(Russia))

16:15 〜 18:15

[Tu-P-47] Post-Irradiation Failure of SiC VD-MOSFETs Exposed to Heavy Ions

*Corinna Martinella^1,3, Thomas Ziemann², Yacine Kadi¹, Rubén Garcia Alia¹, Ulrike Grossner², Arto Javanainen^3,4 (1. CERN - Radiation to Electronics (R2E) Project(Switzerland), 2. Advanced Power Semiconductor Lab. (APS), ETHZ, Zurich(Switzerland), 3. Dep. of Physics, Jyväskylä University(Finland), 4. Dep. of Electrical Engineering and Computer Science, Vanderbilt University(United States of America))

16:15 〜 18:15

[Tu-P-48] Design and Evaluation of an Ultra-Low Inductance SiC Power Module Based on Multiple Phase-Legs and Thin Structure

Junji Ke¹, Si Huang², Zhibin Zhao¹, Ziang Cui¹, Simon S Ang², *Zhong Chen² (1. North China Electric Power Univ. (China), 2. Univ. of Arkansas (USA))

16:15 〜 18:15

[Tu-P-49] Evaluation of Surge Reduction Performance of a SiC Avalanche Diode with Mesa Structure in a Switching Power Supply

*Kunio Koseki¹, Masayuki Yamamoto^1,2, Yasunori Tanaka¹ (1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan), 2. University of Yamanashi(Japan))

16:15 〜 18:15

[Tu-P-50] Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs

*Masashi Nakajima¹, Qimin Jin¹, Mistuaki Kaneko¹, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan))

16:15 〜 18:15

[Tu-P-51LN] GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layer by tri-halide vapor phase epitaxy

*KAZUKUNI HARA^1,2, Junji Ohara¹, Daisuke Uematsu¹, Shoichi Onda² (1. DENSO Corp.(Japan), 2. Nagoya Univ.(Japan))

16:15 〜 18:15

[Tu-P-52LN] Optically Active Defects at the SiC/SiO₂ Interface

*Brett Cameron Johnson¹, J. Woerle^2,3, D. Haasmann⁴, C. Lew¹, R. A. Parker¹, H. Knowles⁵, B. Pingault⁵, M. Atature⁵, A. Gali^6,7, S. Dimitrijev⁴, M. Camarda^2,3, J. C. McCallum¹ (1. Univ. of Melbourne(Australia), 2. Paul Scherrer Inst.(Switzerland), 3. ETH Zurich(Switzerland), 4. Griffith Univ.(Australia), 5. Univ. of Cambridge(UK), 6. Hungarian Academy of Sciences(Hungary), 7. Budapest Univ. of Technology and Economics(Hungary))

16:15 〜 18:15

[Tu-P-53LN] Effect of sacrificial oxidation process after H₂ anneal on electrical properties of 4H-SiC trench MOSFETs

*Jeong Hyun Moon¹ (1. Korea Electrotechnology Research Institute(Korea))

16:15 〜 18:15

[Tu-P-54LN] Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs

*Enea Bianda¹, Andrei Mihaila¹, Gianpaolo Romano¹, Lars Knoll¹, Stephan Wirths¹, Daniele Torresin¹ (1. ABB(Switzerland))

16:15 〜 18:15

[Tu-P-55LN] Failure Analysis of the SiC Clamp Diodes by 10kA/cm² Avalanche Current

*Masayuki Yamamoto^1,2, Kunio Koseki¹, Koji Nakayama¹, Yasunori Tanaka¹ (1. AIST(Japan), 2. Univ. of Yamanashi(Japan))

セッション情報

[Tu-P] Poster Presentation

認証