Keisuke Kurashima¹, Masaya Hayashi¹, *Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1. Yokohama National University(Japan), 2. NuFlare Technology, Inc(Japan), 3. KANTO DENKA KOGYO CO., LTD(Japan))

*Andras Csore¹, Nguyen Tien Son², Ivan Gueorguiev Ivanov², Adam Gali^1,3 (1. Budapest Univ. of Tech. and Economics(Hungary), 2. Linköping Univ.(Sweden), 3. Wigner Res. Centre for Physics, HAS(Hungary))

*teruaki kumazawa^1,2, Masakazu Baba², Yusuke Yamashiro², Mariko Hayashi^2,3, Manabu Takei^2,4, Kimimori Hamada¹, Shinsuke Harada², Yoshiyuki Yonezawa², Hajime Okumura² (1. Toyota Motor Corp.(Japan), 2. National Institute of Advanced Industrial Sience and Technology(AIST)(Japan), 3. DENSO CORP.(Japan), 4. Fuji Electric Co., Ltd.(Japan))

*Sheng Li¹, Siyang Liu¹, Chi Zhang¹, Jiaxing Wei¹, Weifeng Sun¹, Yiheng Li², Zhichao Yang² (1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))

*Jonghwi Park¹, Byung-Kyu Jang¹, Jung-Woo Choi¹, Eunsu Yang¹, Jung-Gyu Kim¹, Sang-Ki Ko¹, Myung-Ok Kyun¹, Kap-Ryeol Ku¹, Dae-Sung Kim², WON JAE LEE² (1. SKC(Korea), 2. Dongeui Univ.(Korea))

*Dae-Sung Kim^1,2, Yun-Ji Shin¹, June-Hyuk Kang^1,2, Seong-Min Jeong¹, Jin-Yong Park², Jeong-Hui Kim², Mi-Seon Park², Yeon-Suk Jang², WON JAE LEE² (1. KICET(Korea), 2. Dongeui Univ.(Korea))

*Tae-Yong Park^1,2, Yun-Ji Shin¹, Minh-Tan Ha^1,3, Si-Young Bae¹, Myung-Hyun Lee¹, Young-Soo Lim², Seong-Min Jeong¹ (1. KICET(Korea), 2. Pukyong National Univ.(Korea), 3. Gyeongsang National Univ.(Korea))

*Gabriel Ferro¹, Xian Huang², Taguhi Yeghoyan¹, Stéphane Gavarini², Véronique Soulière¹, Nathalie Millard-Pinard² (1. Lyon Univ., Lab. LMI(France), 2. Lyon Univ., Lab IPNL(France))

Ichiro Mizushima¹, *Hitoshi Habuka² (1. NuFlare Technology, Inc.(Japan), 2. Yokohama National University(Japan))

Ryohei Kawasaki¹, Kenta Irikura¹, *Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1. Yokohama National University(Japan), 2. KANTO DENKA KOGYO CO., LTD(Japan), 3. AIST(Japan))

Artem Titov¹, *Alicia Walters¹, Tsutomu Shindo², Hirokazu Sasai² (1. Engis Corp.(United States of America), 2. Engis Japan Corp.(Japan))

*Oleg Rusch¹, Carsten Hellinger¹, Jonathan Moult², Yunji Corcoran², Tobias Erlbacher^1,3 (1. Fraunhofer Institute for Integrated Systems and Device Technology IISB(Germany), 2. SMC Diode Solutions, Sangdest Microelectronics(China), 3. Chair of Electron Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg(Germany))

*Ian Manning¹, Y. Matsuda², Gilyong Chung¹, Edward K. Sanchez¹ (1. DuPont Electronics and Imaging, Compound Semiconductor Solutions(United States of America), 2. DuPont Electronics and Imaging, Chestnut Run Plaza(United States of America))

*Matthias Kocher¹, Holger Schlichting¹, Birgit Kallinger¹, Mathias Rommel¹, Anton J. Bauer¹, Tobias Erlbacher^1,2 (1. Fraunhofer Institute for Integrated Systems and Device Technology(Germany), 2. Friedrich-Alexander-Univ. Erlangen-Nuernberg(Germany))

*Kentaro Ohira¹, Toshiyuki Isshiki², Hideki Sako^2,3, Masaki Hasegawa¹, Kenji Kobayashi¹, Katsunori Onuki¹ (1. Hitachi High-Technologies Corp.(Japan), 2. Kyoto Institute of Technology(Japan), 3. Toray Research Center Inc.(Japan))

*ruggero anzalone¹, Andrea Severino¹, Nicolo Piluso¹, Salvo Coffa¹ (1. Stmicroelectronics(Italy))

*Masaki Hasegawa¹, Kentaro Ohira¹, Noriyuki Kaneoka¹, Tomohiko Ogata¹, Katsunori Onuki¹, Kenji Kobayashi¹, Tsutomu Osanai², Keiko Masumoto², Junji Senzaki² (1. Hitachi High-Technologies Corp.(Japan), 2. National Inst. of Advanced Industrial Science and Technology(Japan))

*Kana Shimada¹, Kanta Asada¹, Noboru Ohtani¹ (1. Kwansei Gakuin University, School of Science and Technology(Japan))

*Abebe Tilahun Tarekegne¹, Haiyan Ou¹ (1. Technical University of Denmark (Denmark))

*Daiki Tanaka¹, Weifang Lu¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1. Meijo univ.(Japan), 2. Akasaki Reserch Center.(Japan))

*Vladimir Ilich Sankin¹, Alexey Gennadievich Petrov¹, Pavel Petrovich Shkrebiy¹, Olga Petrovna Kazarova¹, Alexander Alexandrovich Lebedev¹ (1. Ioffe Institute(Russia))

*Hideharu Matsuura¹, Rinya Nishihata¹, Akinobu Takeshita¹, Kohei Ogawa¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1. Osaka Electro-Communication Univ.(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

*Atsuki Hidaka¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Takeshi Mitani², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1. Osaka Electro-Communication Univ.(Japan), 2. National Institute of Advanced Industrial Sci. and Tech.(Japan))

Saba Khadivianazar^1,2, Mathias Rommel¹, *Roland Weingaertner¹, Birgit Kallinger¹, Maria Kolesnik-Gray², Vojislav Krstic² (1. Fraunhofer Institute for Integrated Systems and Device Technology IISB(Germany), 2. Department of Physics, Staudtstr. 7, Bau A3, 91058 Erlangen(Germany))

*Youngjae Lee¹, Sang-mo Koo¹, Wooyoung Son¹, Wook Bang², Junghyen Moon² (1. Kwangwoon Univ.(Korea), 2. Korea Electrotechnology Research Inst.(Korea))

*Seong-Ji Min¹, Dong-Hyeon Kim¹, Hong-Ki Kim², Seongjun Kim², Nam-Suk Lee², Hoon-Kyu Shin², Sang-mo Koo¹ (1. Kwangwoon Univ.(Korea), 2. National Institute for Nanomaterials Technology, Pohang University of Science and Technology (POSTECH)(Korea))

*Muhammad Haroon Rashid¹, Ants Koel¹, Toomas Rang¹ (1. Tallinn University of Technology(Estonia))

Bernd Haehnlein¹, Sergey P. Lebedev², Ilya A. Eliseyev², Valery Yu. Davydov², Alexander A. Lebedev², *Joerg Pezoldt¹ (1. TU Ilmenau(Germany), 2. Ioffe Physical Technical Institute(Russia))

*Giovanni Alfieri¹, Stephan Wirths¹, Dan Mihai Buca², Enea Bianda¹ (1. ABB(Switzerland), 2. Jülich Res.(Germany))

*Tatsuhiko Nishimura¹, Hidetoshi Nakanishi¹, Iwao Kawayama², Masayoshi Tonouchi², Takuji Hosoi³, Takayoshi Shimura³, Heiji Watanabe³ (1. SCREEN Holdings Co., Ltd.(Japan), 2. Inst. of Laser Eng., Osaka Univ.(Japan), 3. Graduate School of Eng., Osaka Univ.(Japan))

*Eiichi Murakami¹, Tatsuya Takeshita¹, Kazuhiro Oda¹ (1. Kyushu Sangyo Univ.(Japan))

*PEYUSH PANDE¹, Sima Dimitrijev¹, Daniel Haasmann¹, Hamid Amini Moghadam¹, Philip Tanner¹, Jisheng Han¹ (1. Queensland Micro- and Nanotechnology Center, Griffith University(Australia))

*Yuta Matsuya¹, Xufang Zhang¹, Dai Okamoto¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Univ. of Tsukuba(Japan))

*Salvatore Cascino¹, Mario Saggio¹, Alfio Guarnera¹ (1. STMicroelectronics(Italy))

*Cristiano Calabretta^1,2, Massimo Zimbone¹, Simona Boninelli¹, Marta Agati¹, Alessandro Pecora¹, Andrea Castiello¹, Guglielmo Fortunato¹, Lucia Calcagno³, Lorenzo Torrisi², Francesco La Via¹ (1. CNR-IMM (Italy), 2. Messina Univ.(Italy), 3. Catania Univ.(Italy))

Kento Okamoto¹, *Akihiro Ikeda², Toshifumi Kikuchi¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (1. Kyushu Univ.(Japan), 2. Sojo Univ.(Japan))

*Yoshinao Takahashi^1,2, Korehito Kato², Hitoshi Habuka¹ (1. Yokohama National Univ.(Japan), 2. KANTO DENKA KOGYO CO., LTD.(Japan))

*Takayuki Kobayashi¹, Masayuki Nakamura¹, Masahiro Furuta¹, Yutaka Kusuda¹, Shin-ichi Motoyama¹ (1. Samco Inc.(Japan))

*Tomokatsu Watanabe¹, Munetaka Noguchi¹, Shingo Tomohisa¹, Naruhisa Miura¹ (1. Mitsubishi Electric corporation(Japan))

*Razvan Pascu¹, Cosmin Romanitan¹, Mihaela Kusko¹, Gheorghe Pristavu², Florin Draghici², Gheorghe Brezeanu² (1. National Institute for Research and Development in Microtechnologies - IMT Bucharest(Romania), 2. University “POLITEHNICA” Bucharest(Romania))

*Holger Schlichting¹, Matthias Kocher¹, Julietta Weisse², Tobias Erlbacher^1,2, Anton J. Bauer¹ (1. Fraunhofer Inst. IISB(Germany), 2. Friedrich-Alexander Univ.(Germany))

*Collin W. Hitchcock¹, T. Paul Chow¹ (1. Rensselaer Polytechnic Institute (RPI)(United States of America))

Haavard Lefdal Hove¹, Ole Christian Spro¹, Giuseppe Guidi², *Dimosthenis Peftitsis¹ (1. Norwegian Univ. of Sci. and Tech.(Norway), 2. SINTEF Energy Res.(Norway))

*Tomasz Sledziewski¹, Tobias Erlbacher¹ (1. Fraunhofer IISB(Germany))

*Nick Yun¹, Justin Lynch¹, Woongje Sung¹ (1. State University of New York Polytechnic Inst. Colleges of Nanoscale Science and Engineering(United States of America))

*Amit K Tiwari¹, Marina Antoniou², Samuel Perkins³, Neophytos Lophitis³, Tatjana Trajkovic¹, Florin Udrea¹ (1. University of Cambridge (UK), 2. University of Warwick (UK), 3. Coventry University (UK))

*Sinsu Kyoung¹, Eun-ha Kim¹, Joon-hyeok Jeon^1,2, Tae Jin Nam¹, Young Sung Hong¹, Tai Young Kang¹ (1. Powercubesemi, Inc.(Korea), 2. Hanyang Univ.(Korea))

*Mehadi Hasan Ziko¹, Ants Koel¹, Jana Toompuu¹, Toomas Rang¹ (1. Tallinn University of Technology(Estonia))

*Shadi Sabri¹, Edward Van Brunt¹, Adam Barkley¹, Brett Hull¹, Dave Grider¹, Satyaki Ganguly¹, Don Gajewski¹, Scott Allen¹, John Palmour¹ (1. Wolfspeed, A Cree Comapny(United States of America))

*Siddarth Sundaresan Sundaresan¹, Jaehoon Park¹, Vamsi Mulpuri¹, Ranbir Singh¹ (1. GeneSiC Semiconductor(United States of America))

*Aleksandr A Lebedev¹, Eugenia V Kalinina¹, Vitalii V. Kozlovski ², Vladimir V. Zabrodski¹, Andrey V. A. Nikolaev¹, Maxim Z. Shvarts¹, Svetlana A. Levina¹ (1. Ioffe Institute(Russia), 2. Peter the Great St. Petersburg Polytechnic University(Russia))

*Jheng-Yi Jiang¹, Hua-Yu Shih¹, Chen-Xuan Tu¹, Ya-Xun Lin¹, Der-Sheng Chao¹, Chih-Fang Huang¹ (1. National Tsing Hua University(Taiwan))

*Peter Alexandrov¹, Anup Bhalla¹, Xueqing Li¹, Jens Eltze² (1. United Silicon Carbide, Inc.(United States of America), 2. APEX Microtechnology(United States of America))

*Yoshimasa Takaku¹, Hikaru Tanaka¹, Yosei Takada¹, Shuhei Nakata¹ (1. Kanazawa Institute of Technology(Japan))

*Xuejian Xie¹, Jinying Yu¹, Xianglong Yang¹, Xiufang Chen¹, Xiangang Xu¹, Xiaobo Hu¹, Xintong Liu¹, Duo Liu¹ (1. Shandong Univ.(China))

*Kaoru NAKAJIMA¹, Takuya MATSUMOTO¹, Kenji KIMURA¹, Mizuki NISHIDA², Koji KITA² (1. Kyoto Univ.(Japan), 2. The Univ. of Tokyo(Japan))

*Joseph McPherson¹, Collin Hitchcock¹, Tat-Sing Paul Chow¹, Wei Ji¹ (1. Rensselaer Polytechnic Inst.(United States of America))

*Cuong Van Vuong¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Kousuke Muraoka¹, Tetsuya Meguro¹, Shin-Ichiro Kuroki¹ (1. Hiroshima University(Japan), 2. Phenitec Semiconductor Co ,Ltd(Japan))