16:15 〜 18:15

[IP-01(Invited)] SiC epitaxial reactor cleaning by ClF₃ gas with the help of reaction heat

Keisuke Kurashima¹, Masaya Hayashi¹, *Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1. Yokohama National University(Japan), 2. NuFlare Technology, Inc(Japan), 3. KANTO DENKA KOGYO CO., LTD(Japan))

16:15 〜 18:15

[IP-02(Invited)] Silicon vacancy related defects in 4H SiC for quantum technology

*Andras Csore¹, Nguyen Tien Son², Ivan Gueorguiev Ivanov², Adam Gali^1,3 (1. Budapest Univ. of Tech. and Economics(Hungary), 2. Linköping Univ.(Sweden), 3. Wigner Res. Centre for Physics, HAS(Hungary))

16:15 〜 18:15

[IP-03(Invited)] Evaluation of the influence of Al⁺ implantation on the forward degradation of SiC bipolar devices

*teruaki kumazawa^1,2, Masakazu Baba², Yusuke Yamashiro², Mariko Hayashi^2,3, Manabu Takei^2,4, Kimimori Hamada¹, Shinsuke Harada², Yoshiyuki Yonezawa², Hajime Okumura² (1. Toyota Motor Corp.(Japan), 2. National Institute of Advanced Industrial Sience and Technology(AIST)(Japan), 3. DENSO CORP.(Japan), 4. Fuji Electric Co., Ltd.(Japan))

16:15 〜 18:15

[IP-04(Invited)] Electrical Parameters Degradations of p-GaN HEMTs under Repetitive UIS Stress

*Sheng Li¹, Siyang Liu¹, Chi Zhang¹, Jiaxing Wei¹, Weifeng Sun¹, Yiheng Li², Zhichao Yang² (1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))

16:15 〜 18:15

[We-P-01] Crystal separation method of 6-inch 4H-SiC crystal using the enhanced adhesive contraction

*Jonghwi Park¹, Byung-Kyu Jang¹, Jung-Woo Choi¹, Eunsu Yang¹, Jung-Gyu Kim¹, Sang-Ki Ko¹, Myung-Ok Kyun¹, Kap-Ryeol Ku¹, Dae-Sung Kim², WON JAE LEE² (1. SKC(Korea), 2. Dongeui Univ.(Korea))

16:15 〜 18:15

[We-P-02] The choice of seeding shaft for top-seeded solution growth of 4H-SiC

*Dae-Sung Kim^1,2, Yun-Ji Shin¹, June-Hyuk Kang^1,2, Seong-Min Jeong¹, Jin-Yong Park², Jeong-Hui Kim², Mi-Seon Park², Yeon-Suk Jang², WON JAE LEE² (1. KICET(Korea), 2. Dongeui Univ.(Korea))

講演取消

16:15 〜 18:15

[We-P-03] Withdrawn

16:15 〜 18:15

[We-P-04] Hot-zone design of induction heating furnace for crystal growth with top seeded solution growth of SiC considering emissivity of graphite

*Tae-Yong Park^1,2, Yun-Ji Shin¹, Minh-Tan Ha^1,3, Si-Young Bae¹, Myung-Hyun Lee¹, Young-Soo Lim², Seong-Min Jeong¹ (1. KICET(Korea), 2. Pukyong National Univ.(Korea), 3. Gyeongsang National Univ.(Korea))

16:15 〜 18:15

[We-P-05] Mono- versus poly-crystalline SiC for nuclear applications

*Gabriel Ferro¹, Xian Huang², Taguhi Yeghoyan¹, Stéphane Gavarini², Véronique Soulière¹, Nathalie Millard-Pinard² (1. Lyon Univ., Lab. LMI(France), 2. Lyon Univ., Lab IPNL(France))

16:15 〜 18:15

[We-P-06] Chemical behaviour of byproduct layer in exhaust tube formed by silicon carbide epitaxial growth in a system using chlorides

Ichiro Mizushima¹, *Hitoshi Habuka² (1. NuFlare Technology, Inc.(Japan), 2. Yokohama National University(Japan))

16:15 〜 18:15

[We-P-07] Non-plasma dry etcher design for 200 mm-diameter silicon carbide wafer

Ryohei Kawasaki¹, Kenta Irikura¹, *Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1. Yokohama National University(Japan), 2. KANTO DENKA KOGYO CO., LTD(Japan), 3. AIST(Japan))

16:15 〜 18:15

[We-P-08] Cost-efficient High-throughput Polishing of Silicon Carbide Seed Crystals

Artem Titov¹, *Alicia Walters¹, Tsutomu Shindo², Hirokazu Sasai² (1. Engis Corp.(United States of America), 2. Engis Japan Corp.(Japan))

16:15 〜 18:15

[We-P-09] Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology

*Oleg Rusch¹, Carsten Hellinger¹, Jonathan Moult², Yunji Corcoran², Tobias Erlbacher^1,3 (1. Fraunhofer Institute for Integrated Systems and Device Technology IISB(Germany), 2. SMC Diode Solutions, Sangdest Microelectronics(China), 3. Chair of Electron Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg(Germany))

16:15 〜 18:15

[We-P-10] Progress in bulk 4H SiC crystal growth for 150 mm wafer production

*Ian Manning¹, Y. Matsuda², Gilyong Chung¹, Edward K. Sanchez¹ (1. DuPont Electronics and Imaging, Compound Semiconductor Solutions(United States of America), 2. DuPont Electronics and Imaging, Chestnut Run Plaza(United States of America))

16:15 〜 18:15

[We-P-11] Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-line Defect Analysis by using PL Scanning

*Matthias Kocher¹, Holger Schlichting¹, Birgit Kallinger¹, Mathias Rommel¹, Anton J. Bauer¹, Tobias Erlbacher^1,2 (1. Fraunhofer Institute for Integrated Systems and Device Technology(Germany), 2. Friedrich-Alexander-Univ. Erlangen-Nuernberg(Germany))

16:15 〜 18:15

[We-P-12] Review and detail classification of stacking faults in 4H-SiC epitaxial layer by mirror projection electron microscopy

*Kentaro Ohira¹, Toshiyuki Isshiki², Hideki Sako^2,3, Masaki Hasegawa¹, Kenji Kobayashi¹, Katsunori Onuki¹ (1. Hitachi High-Technologies Corp.(Japan), 2. Kyoto Institute of Technology(Japan), 3. Toray Research Center Inc.(Japan))

16:15 〜 18:15

[We-P-13] Dislocations analysis on implanted 4H-SiC epi-layer by KOH molten etching

*ruggero anzalone¹, Andrea Severino¹, Nicolo Piluso¹, Salvo Coffa¹ (1. Stmicroelectronics(Italy))

16:15 〜 18:15

[We-P-14] 4H-SiC Epi-ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

*Masaki Hasegawa¹, Kentaro Ohira¹, Noriyuki Kaneoka¹, Tomohiko Ogata¹, Katsunori Onuki¹, Kenji Kobayashi¹, Tsutomu Osanai², Keiko Masumoto², Junji Senzaki² (1. Hitachi High-Technologies Corp.(Japan), 2. National Inst. of Advanced Industrial Science and Technology(Japan))

16:15 〜 18:15

[We-P-15] Annealing behavior of double Shockley stacking faults in heavily nitrogen-doped 4H-SiC crystals

*Kana Shimada¹, Kanta Asada¹, Noboru Ohtani¹ (1. Kwansei Gakuin University, School of Science and Technology(Japan))

16:15 〜 18:15

[We-P-16] Excitation power dependence of the photoluminescence emission in 6H silicon carbide

*Abebe Tilahun Tarekegne¹, Haiyan Ou¹ (1. Technical University of Denmark (Denmark))

16:15 〜 18:15

[We-P-17] Optical characterization of fluorescent SiC with high boron and nitrogen concentrations

*Daiki Tanaka¹, Weifang Lu¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1. Meijo univ.(Japan), 2. Akasaki Reserch Center.(Japan))

16:15 〜 18:15

[We-P-18] SiC natural and artificial A₃B₅ superlattices for the implementation of the Bloch oscillation process: a comparative analysis

*Vladimir Ilich Sankin¹, Alexey Gennadievich Petrov¹, Pavel Petrovich Shkrebiy¹, Olga Petrovna Kazarova¹, Alexander Alexandrovich Lebedev¹ (1. Ioffe Institute(Russia))

16:15 〜 18:15

[We-P-19] Anomalous Temperature Dependence of Hall Coefficient of Heavily Al-doped 4H-SiC Epilayers in Band Conduction Region

*Hideharu Matsuura¹, Rinya Nishihata¹, Akinobu Takeshita¹, Kohei Ogawa¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1. Osaka Electro-Communication Univ.(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

16:15 〜 18:15

[We-P-20] Anomalous Conduction Mechanism between Band and Nearest-Neighbor-Hopping Conduction in Heavily Al-doped p-type 4H-SiC

*Atsuki Hidaka¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Takeshi Mitani², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1. Osaka Electro-Communication Univ.(Japan), 2. National Institute of Advanced Industrial Sci. and Tech.(Japan))

16:15 〜 18:15

[We-P-21] Doping dependence of optical constants for n-type (N) 4H-SiC substrates

Saba Khadivianazar^1,2, Mathias Rommel¹, *Roland Weingaertner¹, Birgit Kallinger¹, Maria Kolesnik-Gray², Vojislav Krstic² (1. Fraunhofer Institute for Integrated Systems and Device Technology IISB(Germany), 2. Department of Physics, Staudtstr. 7, Bau A3, 91058 Erlangen(Germany))

16:15 〜 18:15

[We-P-22] Effect of Oxygen Annealing on the Characteristics of isotype n-Ga₂O₃/4H-SiC heterojunction diodes

*Youngjae Lee¹, Sang-mo Koo¹, Wooyoung Son¹, Wook Bang², Junghyen Moon² (1. Kwangwoon Univ.(Korea), 2. Korea Electrotechnology Research Inst.(Korea))

16:15 〜 18:15

[We-P-23] Fabrication and Properties of AlN/4H-SiC Schottky Barrier Diodes

*Seong-Ji Min¹, Dong-Hyeon Kim¹, Hong-Ki Kim², Seongjun Kim², Nam-Suk Lee², Hoon-Kyu Shin², Sang-mo Koo¹ (1. Kwangwoon Univ.(Korea), 2. National Institute for Nanomaterials Technology, Pohang University of Science and Technology (POSTECH)(Korea))

16:15 〜 18:15

[We-P-24] Nano- and Micro-scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction Diodes

*Muhammad Haroon Rashid¹, Ants Koel¹, Toomas Rang¹ (1. Tallinn University of Technology(Estonia))

16:15 〜 18:15

[We-P-25] Graphene quality assessment using an entropy approach of SEM images

Bernd Haehnlein¹, Sergey P. Lebedev², Ilya A. Eliseyev², Valery Yu. Davydov², Alexander A. Lebedev², *Joerg Pezoldt¹ (1. TU Ilmenau(Germany), 2. Ioffe Physical Technical Institute(Russia))

16:15 〜 18:15

[We-P-26] Manganese Doping for Highly-Resistive SiC: a Deep Level Study

*Giovanni Alfieri¹, Stephan Wirths¹, Dan Mihai Buca², Enea Bianda¹ (1. ABB(Switzerland), 2. Jülich Res.(Germany))

16:15 〜 18:15

[We-P-27] Characterization of Surface Potential of Oxidized Silicon Carbide by a Laser Terahertz Emission Microscope

*Tatsuhiko Nishimura¹, Hidetoshi Nakanishi¹, Iwao Kawayama², Masayoshi Tonouchi², Takuji Hosoi³, Takayoshi Shimura³, Heiji Watanabe³ (1. SCREEN Holdings Co., Ltd.(Japan), 2. Inst. of Laser Eng., Osaka Univ.(Japan), 3. Graduate School of Eng., Osaka Univ.(Japan))

16:15 〜 18:15

[We-P-28] TDDB lifetime enahancement of SiC-MOSFETs under gate-switching operation

*Eiichi Murakami¹, Tatsuya Takeshita¹, Kazuhiro Oda¹ (1. Kyushu Sangyo Univ.(Japan))

16:15 〜 18:15

[We-P-29] A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

*PEYUSH PANDE¹, Sima Dimitrijev¹, Daniel Haasmann¹, Hamid Amini Moghadam¹, Philip Tanner¹, Jisheng Han¹ (1. Queensland Micro- and Nanotechnology Center, Griffith University(Australia))

16:15 〜 18:15

[We-P-30] Analysis of three-level charge pumping characteristics of 4H-SiC MOSFETs considering near-interface traps

*Yuta Matsuya¹, Xufang Zhang¹, Dai Okamoto¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Univ. of Tsukuba(Japan))

16:15 〜 18:15

[We-P-31] Modeling of Threshold Voltage Hysteresis in SiC Mosfet Device

*Salvatore Cascino¹, Mario Saggio¹, Alfio Guarnera¹ (1. STMicroelectronics(Italy))

16:15 〜 18:15

[We-P-32] Laser Annealing of P and Al implanted 4H-SiC epitaxial layers

*Cristiano Calabretta^1,2, Massimo Zimbone¹, Simona Boninelli¹, Marta Agati¹, Alessandro Pecora¹, Andrea Castiello¹, Guglielmo Fortunato¹, Lucia Calcagno³, Lorenzo Torrisi², Francesco La Via¹ (1. CNR-IMM (Italy), 2. Messina Univ.(Italy), 3. Catania Univ.(Italy))

16:15 〜 18:15

[We-P-33] Room Temperature Processing of Low Resistance Contacts to p-type 4H-SiC using Laser Doping

Kento Okamoto¹, *Akihiro Ikeda², Toshifumi Kikuchi¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (1. Kyushu Univ.(Japan), 2. Sojo Univ.(Japan))

16:15 〜 18:15

[We-P-34] Development of SiC etching by chlorine monofluoride gas

*Yoshinao Takahashi^1,2, Korehito Kato², Hitoshi Habuka¹ (1. Yokohama National Univ.(Japan), 2. KANTO DENKA KOGYO CO., LTD.(Japan))

16:15 〜 18:15

[We-P-35] Deposition of Gate Oxide for SiC Trench MOSFET with Thick SiO₂ in the Trench Bottom

*Takayuki Kobayashi¹, Masayuki Nakamura¹, Masahiro Furuta¹, Yutaka Kusuda¹, Shin-ichi Motoyama¹ (1. Samco Inc.(Japan))

16:15 〜 18:15

[We-P-36] Compatibility of POCl₃ gate process with the fabrication of vertical 4H-SiC MOSFETs

*Tomokatsu Watanabe¹, Munetaka Noguchi¹, Shingo Tomohisa¹, Naruhisa Miura¹ (1. Mitsubishi Electric corporation(Japan))

16:15 〜 18:15

[We-P-37] Near interface oxide traps investigations using dual sweep C-V characteristics for grown polyoxides on SiC

*Razvan Pascu¹, Cosmin Romanitan¹, Mihaela Kusko¹, Gheorghe Pristavu², Florin Draghici², Gheorghe Brezeanu² (1. National Institute for Research and Development in Microtechnologies - IMT Bucharest(Romania), 2. University “POLITEHNICA” Bucharest(Romania))

16:15 〜 18:15

[We-P-38] Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors

*Holger Schlichting¹, Matthias Kocher¹, Julietta Weisse², Tobias Erlbacher^1,2, Anton J. Bauer¹ (1. Fraunhofer Inst. IISB(Germany), 2. Friedrich-Alexander Univ.(Germany))

16:15 〜 18:15

[We-P-39] 1200V Bidirectional SiC MOSFETs Implemented with Two Unidirectional MOSFETs Back-to-Back in a Common Drain Configuration

*Collin W. Hitchcock¹, T. Paul Chow¹ (1. Rensselaer Polytechnic Institute (RPI)(United States of America))

16:15 〜 18:15

[We-P-40] Improved SPICE SiC MOSFET Model to Avoid Convergence Errors

Haavard Lefdal Hove¹, Ole Christian Spro¹, Giuseppe Guidi², *Dimosthenis Peftitsis¹ (1. Norwegian Univ. of Sci. and Tech.(Norway), 2. SINTEF Energy Res.(Norway))

16:15 〜 18:15

[We-P-41] SiC MOSFET with short channel defined by one shallow source-JFET implantation: a simulation study

*Tomasz Sledziewski¹, Tobias Erlbacher¹ (1. Fraunhofer IISB(Germany))

16:15 〜 18:15

[We-P-42] Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-inch Substrate using a Single Process

*Nick Yun¹, Justin Lynch¹, Woongje Sung¹ (1. State University of New York Polytechnic Inst. Colleges of Nanoscale Science and Engineering(United States of America))

16:15 〜 18:15

[We-P-43] Improvement in transient performance of >10kV SiC IGBT with an optimized retrograde p-well

*Amit K Tiwari¹, Marina Antoniou², Samuel Perkins³, Neophytos Lophitis³, Tatjana Trajkovic¹, Florin Udrea¹ (1. University of Cambridge (UK), 2. University of Warwick (UK), 3. Coventry University (UK))

16:15 〜 18:15

[We-P-44] Enhancement of ESD Protection using Wide-trench Structure in 650 V 4H-SiC Junction Barrier Schottky Diode

*Sinsu Kyoung¹, Eun-ha Kim¹, Joon-hyeok Jeon^1,2, Tae Jin Nam¹, Young Sung Hong¹, Tai Young Kang¹ (1. Powercubesemi, Inc.(Korea), 2. Hanyang Univ.(Korea))

16:15 〜 18:15

[We-P-45] Analysis of barrier inhomogenities of p-type Al/4H-SiC Schottky barrier diodes

*Mehadi Hasan Ziko¹, Ants Koel¹, Jana Toompuu¹, Toomas Rang¹ (1. Tallinn University of Technology(Estonia))

16:15 〜 18:15

[We-P-46] High Volume Manufacturing and Qualification of 6.5 kV, 30 A SiC Power MOSFETs on 150 mm Wafers

*Shadi Sabri¹, Edward Van Brunt¹, Adam Barkley¹, Brett Hull¹, Dave Grider¹, Satyaki Ganguly¹, Don Gajewski¹, Scott Allen¹, John Palmour¹ (1. Wolfspeed, A Cree Comapny(United States of America))

16:15 〜 18:15

[We-P-47] 1200 V and 4000 V SiC DMOSFETs

*Siddarth Sundaresan Sundaresan¹, Jaehoon Park¹, Vamsi Mulpuri¹, Ranbir Singh¹ (1. GeneSiC Semiconductor(United States of America))

16:15 〜 18:15

[We-P-48] Effect irradiation with 15 MeV protons on properties of 4H-SiC UV detectors

*Aleksandr A Lebedev¹, Eugenia V Kalinina¹, Vitalii V. Kozlovski ², Vladimir V. Zabrodski¹, Andrey V. A. Nikolaev¹, Maxim Z. Shvarts¹, Svetlana A. Levina¹ (1. Ioffe Institute(Russia), 2. Peter the Great St. Petersburg Polytechnic University(Russia))

16:15 〜 18:15

[We-P-49] Study on the Influence of Gamma-ray Irradiation on Commercial SiC DMOSFETs

*Jheng-Yi Jiang¹, Hua-Yu Shih¹, Chen-Xuan Tu¹, Ya-Xun Lin¹, Der-Sheng Chao¹, Chih-Fang Huang¹ (1. National Tsing Hua University(Taiwan))

16:15 〜 18:15

[We-P-50] High-Performance SIP Half-Bridge IPM Based on 35mOhm/1200V SiC Stack-Cascode

*Peter Alexandrov¹, Anup Bhalla¹, Xueqing Li¹, Jens Eltze² (1. United Silicon Carbide, Inc.(United States of America), 2. APEX Microtechnology(United States of America))

16:15 〜 18:15

[We-P-51] Inrush Current Effects on SiC-MOSFETs for LLC Converter

*Yoshimasa Takaku¹, Hikaru Tanaka¹, Yosei Takada¹, Shuhei Nakata¹ (1. Kanazawa Institute of Technology(Japan))

16:15 〜 18:15

[We-P-52LN] Investigation of carbon inclusions in SiC crystals grown by PVT method

*Xuejian Xie¹, Jinying Yu¹, Xianglong Yang¹, Xiufang Chen¹, Xiangang Xu¹, Xiaobo Hu¹, Xintong Liu¹, Duo Liu¹ (1. Shandong Univ.(China))

16:15 〜 18:15

[We-P-53LN] Mechanism of improvement in channel mobility of SiC-MOSFET by wet post-oxidation annealing studied using ion beam analysis techniques

*Kaoru NAKAJIMA¹, Takuya MATSUMOTO¹, Kenji KIMURA¹, Mizuki NISHIDA², Koji KITA² (1. Kyoto Univ.(Japan), 2. The Univ. of Tokyo(Japan))

16:15 〜 18:15

[We-P-54LN] Mechanisms of Heavy Ion Induced Single Event Burnout in 4H-SiC Power MOSFETs

*Joseph McPherson¹, Collin Hitchcock¹, Tat-Sing Paul Chow¹, Wei Ji¹ (1. Rensselaer Polytechnic Inst.(United States of America))

16:15 〜 18:15

[We-P-55LN] High Temperature Reliability of 4H-SiC Devices and Single Stage 4H-SiC MOSFET Amplifier at 400ºC

*Cuong Van Vuong¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Kousuke Muraoka¹, Tetsuya Meguro¹, Shin-Ichiro Kuroki¹ (1. Hiroshima University(Japan), 2. Phenitec Semiconductor Co ,Ltd(Japan))

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[We-P] Poster Presentation

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