ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Fr-1A] Oxide Stability and Reliability

Fri. Oct 4, 2019 8:45 AM - 10:00 AM Room A (Kyoto International Conference Center)

9:15 AM - 9:30 AM

[Fr-1A-02] Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method

*Dai Okamoto1, Hiroki Nemoto1, Xufang Zhang1, Xingyan Zhou1, Mitsuru Sometani2, Mitsuo Okamoto2, Shinsuke Harada2, Tetsuo Hatakeyama2, Noriyuki Iwamuro1, Hiroshi Yano1 (1. Univ. Tsukuba(Japan), 2. AIST(Japan))