ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[Fr-1A] Oxide Stability and Reliability

2019年10月4日(金) 08:45 〜 10:00 Room A (Kyoto International Conference Center)

09:15 〜 09:30

[Fr-1A-02] Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method

*Dai Okamoto1, Hiroki Nemoto1, Xufang Zhang1, Xingyan Zhou1, Mitsuru Sometani2, Mitsuo Okamoto2, Shinsuke Harada2, Tetsuo Hatakeyama2, Noriyuki Iwamuro1, Hiroshi Yano1 (1. Univ. Tsukuba(Japan), 2. AIST(Japan))