ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Fr-1A] Oxide Stability and Reliability

Fri. Oct 4, 2019 8:45 AM - 10:00 AM Room A (Kyoto International Conference Center)

9:45 AM - 10:00 AM

[Fr-1A-04] Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias

*Hiroki Nemoto1, Dai Okamoto1, Xufang Zhang1, Mitsuru Sometani2, Mitsuo Okamoto2, Tetsuo Hatakeyama2, Shinsuke Harada2, Noriyuki Iwamuro1, Hiroshi Yano1 (1. Univ. of Tsukuba(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))