[Fr-1A] Oxide Stability and Reliability

[Fr-1A-04] Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias

*Hiroki Nemoto¹, Dai Okamoto¹, Xufang Zhang¹, Mitsuru Sometani², Mitsuo Okamoto², Tetsuo Hatakeyama², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Univ. of Tsukuba(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))