Precise Placement of V<sub>Si</sub> in 4H-SiC Using Li<sup>+</sup> Implantation for Quantum Technologies

Shojan P. Pavunny

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Oral Presentation

Characterization and Defect Engineering

[Fr-1B] Novel Materials and Concepts

Fri. Oct 4, 2019 8:45 AM - 10:00 AM Annex Hall 2 (Kyoto International Conference Center)

9:45 AM - 10:00 AM

[Fr-1B-04LN] Precise Placement of V_Si in 4H-SiC Using Li⁺ Implantation for Quantum Technologies

Shojan P. Pavunny¹, *Rachael L Myers-Ward¹, D. K. Gaskill¹, Edward Bielejec², Hunter Banks¹, Andrew L. Yeats¹, Matthew T. DeJarld³, Samuel Carter¹ (1. US Naval Research Laboratory(United States of America), 2. Sandia National Laboratories(United States of America), 3. Raytheon(United States of America))

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Presentation information

[Fr-1B] Novel Materials and Concepts

[Fr-1B-04LN] Precise Placement of VSi in 4H-SiC Using Li+ Implantation for Quantum Technologies

[Fr-1B-04LN] Precise Placement of V_Si in 4H-SiC Using Li⁺ Implantation for Quantum Technologies