ICSCRM2019

Presentation information

Oral Presentation

Power and High-Frequency Devices

[Fr-2A] Bipolar Power Transistors

Fri. Oct 4, 2019 10:30 AM - 12:00 PM Room A (Kyoto International Conference Center)

11:00 AM - 11:15 AM

[Fr-2A-02] Enhancement of Conductivity Modulation in SiC Bipolar Junction Transistors by Decreasing Base Spreading Resistance

*Satoshi Asada1, Mitsuaki Kaneko1, Jun Suda1, Tsunenobu Kimoto1 (1. Kyoto Univ.(Japan))