ICSCRM2019

講演情報

Oral Presentation

Power and High-Frequency Devices

[Fr-2A] Bipolar Power Transistors

2019年10月4日(金) 10:30 〜 12:00 Room A (Kyoto International Conference Center)

11:00 〜 11:15

[Fr-2A-02] Enhancement of Conductivity Modulation in SiC Bipolar Junction Transistors by Decreasing Base Spreading Resistance

*Satoshi Asada1, Mitsuaki Kaneko1, Jun Suda1, Tsunenobu Kimoto1 (1. Kyoto Univ.(Japan))