ICSCRM2019

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Oral Presentation

Power and High-Frequency Devices

[Fr-2A] Bipolar Power Transistors

Fri. Oct 4, 2019 10:30 AM - 12:00 PM Room A (Kyoto International Conference Center)

11:30 AM - 11:45 AM

[Fr-2A-04] Experimental demonstration of the SOA ruggedness in 13 kV SiC-IGBT

*Kazuya Konishi1, Kenji Hamada1, Hiroaki Okabe1, Yusuke Miyata1, Hiroki Niwa1, Kohei Ebihara1, Kotaro Kawahara1, Naoyuki Kawabata1, Shingo Tomohisa1, Naruhisa Miura1 (1. Mitsubishi Electric Corporation(Japan))