ICSCRM2019

講演情報

印刷

Oral Presentation

Power and High-Frequency Devices

[Fr-2A] Bipolar Power Transistors

2019年10月4日(金) 10:30 〜 12:00 Room A (Kyoto International Conference Center)

11:30 〜 11:45

[Fr-2A-04] Experimental demonstration of the SOA ruggedness in 13 kV SiC-IGBT

*Kazuya Konishi1, Kenji Hamada1, Hiroaki Okabe1, Yusuke Miyata1, Hiroki Niwa1, Kohei Ebihara1, Kotaro Kawahara1, Naoyuki Kawabata1, Shingo Tomohisa1, Naruhisa Miura1 (1. Mitsubishi Electric Corporation(Japan))