ICSCRM2019

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Oral Presentation

Power and High-Frequency Devices

[Mo-1A] MOSFETs I

Mon. Sep 30, 2019 11:30 AM - 12:45 PM Room A (Kyoto International Conference Center)

12:00 PM - 12:15 PM

[Mo-1A-02] Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation

*Yutaka Fukui1, Katsutoshi Sugawara1, Rina Tanaka1, Hidenori Koketsu1, Hideyuki Hatta1, Yusuke Miyata1, Hiroyoshi Suzuki1, Kensuke Taguchi1, Yasuhiro Kagawa1, Shingo Tomohisa1, Naruhisa Miura1 (1. Mitsubishi Electric Corp.(Japan))