[Mo-1A] MOSFETs I

[Mo-1A-02] Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation

*Yutaka Fukui¹, Katsutoshi Sugawara¹, Rina Tanaka¹, Hidenori Koketsu¹, Hideyuki Hatta¹, Yusuke Miyata¹, Hiroyoshi Suzuki¹, Kensuke Taguchi¹, Yasuhiro Kagawa¹, Shingo Tomohisa¹, Naruhisa Miura¹ (1. Mitsubishi Electric Corp.(Japan))