[Mo-1A] MOSFETs I

[Mo-1A-03] Performace Improvement of Trench Gate SiC MOSFET by Localized High-Concentration N-Type Ion Implantation

*Rina Tanaka¹, Katsutoshi Sugawara², Yutaka Fukui¹, Hideyuki Hatta¹, Hidenori Koketsu¹, Hiroyoshi Suzuki², Yusuke Miyata¹, Kensuke Taguchi², Yasuhiro Kagawa², Shingo Tomohisa¹, Naruhisa Miura¹ (1. Advanced Technology R&D Center, Mitsubishi Electric Corp.(Japan), 2. Power Device Works, Mitsubishi Electric Corp.(Japan))