ICSCRM2019

講演情報

印刷

Oral Presentation

Power and High-Frequency Devices

[Mo-1A] MOSFETs I

2019年9月30日(月) 11:30 〜 12:45 Room A (Kyoto International Conference Center)

12:30 〜 12:45

[Mo-1A-04] 1200 V / 200 A V-groove Trench MOSFET Optimized for Low Power Loss and High Reliability

*Kosuke Uchida1, Toru Hiyoshi1, Yu Saitoh1, Hiroshi Egusa1, Tatsushi Kaneda1, Hirotaka Oomori1, Takashi Tsuno1 (1. Sumitomo Electric Industries, Ltd.(Japan))