[Mo-1B] Quantum Technology I

[Mo-1B-02] The carbon antisite-vacancy defect in 4H-SiC: energy level and charge state control

*Nguyen Tien Son¹, Pontus Stenberg¹, Valdas Jokubavicius¹, Hiroshi Abe², Takeshi Ohshima², Jawad Ul-Hassan¹, Ivan Gueorguiev Ivanov¹ (1. Department of Physics, Chemistry and Biology, Linköping Univ., SE-58183 Linköping(Sweden), 2. National Inst. for Quantum and Radiological Sci. and Tech., 1233 Watanuki, Takasaki, Gunma 370-1292(Japan))