ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Mo-2A] Oxidation and Nitridation

Mon. Sep 30, 2019 2:15 PM - 3:30 PM Room A (Kyoto International Conference Center)

2:15 PM - 2:30 PM

[Mo-2A-01] Anomalous band alignment change of SiO2/4H-SiC MOS capacitors induced by NO-POA and its possible origin

*Tae-Hyeon Kil1, Koji Kita1 (1. Univ. of Tokyo(Japan))