ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[Mo-2A] Oxidation and Nitridation

2019年9月30日(月) 14:15 〜 15:30 Room A (Kyoto International Conference Center)

14:15 〜 14:30

[Mo-2A-01] Anomalous band alignment change of SiO2/4H-SiC MOS capacitors induced by NO-POA and its possible origin

*Tae-Hyeon Kil1, Koji Kita1 (1. Univ. of Tokyo(Japan))