ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Mo-2A] Oxidation and Nitridation

Mon. Sep 30, 2019 2:15 PM - 3:30 PM Room A (Kyoto International Conference Center)

3:00 PM - 3:15 PM

[Mo-2A-04] Nitridation of SiC surfaces by H2/N2 treatment

*Koichi Murata1, Daisuke Mori2, Aki Takigawa2, Hidekazu Tsuchida1 (1. Central Research Institute of Electric Power Industry (CRIEPI)(Japan), 2. Fuji Electric Co., Ltd.(Japan))