ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[Mo-2A] Oxidation and Nitridation

2019年9月30日(月) 14:15 〜 15:30 Room A (Kyoto International Conference Center)

15:00 〜 15:15

[Mo-2A-04] Nitridation of SiC surfaces by H2/N2 treatment

*Koichi Murata1, Daisuke Mori2, Aki Takigawa2, Hidekazu Tsuchida1 (1. Central Research Institute of Electric Power Industry (CRIEPI)(Japan), 2. Fuji Electric Co., Ltd.(Japan))