3C-SiC growth on ISP substrates: effects of substrate geometry on void formation and growth rate

Presentation information

Oral Presentation

Growth and Wafer Manufacturing

Mon. Sep 30, 2019 2:15 PM - 3:30 PM Annex Hall 2 (Kyoto International Conference Center)

2:30 PM - 2:45 PM

*M. Zimbone¹, C. Calabretta¹, M. Zielinski², F. Mancarella¹, Francesco La Via¹ (1. CNR-IMM(Italy), 2. NOVASiC(France))