3C-SiC growth on ISP substrates: effects of substrate geometry on void formation and growth rate

講演情報

Oral Presentation

Growth and Wafer Manufacturing

2019年9月30日(月) 14:15 〜 15:30 Annex Hall 2 (Kyoto International Conference Center)

14:30 〜 14:45

*M. Zimbone¹, C. Calabretta¹, M. Zielinski², F. Mancarella¹, Francesco La Via¹ (1. CNR-IMM(Italy), 2. NOVASiC(France))